Nanostructured Layers in High Temperature — Pressure Treated Silicon Implanted with Hydrogen / Helium

Structural, electrical and photoluminescence properties of single crystalline silicon implanted with hydrogen and helium, Si: H and Si: He (ion doses ≤ 5. 1016 cm-2, energy, E ≤ 200 keV) and subjected to annealing at up to 1470K under hydrostatic pressure up to 1.2 GPa were investigated. The temperature — pressure (HT — HP) treatment of Si: H and Si: He results in creation of nanostructured buried layers containing gas — filled cavities and numerous extended and point defects; the HT — HP treated Si: H structures are not splitted contrary to those annealed under atmospheric pressure. The HT — HP induced effects are related to creation of smaller, nanometer — sized structural defects and to retarded out — diffusion of hydrogen and helium at HP. The buried layers are active in respect of oxygen gettering. The Si: H and Si: He samples indicate visible photoluminescence after subjecting to specific HT — HP treatment.