Device and technology simulation of IGBT on SOI structure


Results of computer simulation of manufacturing a bipolar transistor with insulated gate (IGBT) on the base of technology “Silicon on insulator” (SOI) are presented. Current-voltage characteristics of the investigated IGBT device were calculated. The results obtained were used as a base for optimization of the most significant technological parameter, a gate oxide thickness. It is shown that the gate oxide thickness has a significant impact on the electrical characteristics of the IGBT. The calculated values of the switch-on and switch-off times less than one order, and the value of the collector current is more than two orders of magnitude for the vertical structure of the IGBT based on bulk silicon in comparison with IGBT on SOI structure.