GaN growth ON β-Ga2O3 substrates by HVPE

Авторы:
В.И Николаев А.И. Печников В.Н. Маслов А.А. Головатенко В.М. Крымов С.И. Степанов Н.К. Жумашев В.Е. Бугров А. Е. Романов
Аннотация:

Gallium oxide β-Ga2O3 crystals were grown by a seedless crystallization from a Ga2O3-Al2O3 melt. Platelets with (100) orientation were produced by cleaving of the β-Ga2O3 ingot. These platelets were employed as substrates for GaN deposition by HVPE. Properties of the β-Ga2O3 crystals and GaN epitaxial layers on β-Ga2O3 substrates were studied.