Ferroelectric material is generally used in engineering fields for such purposes as sensors, microelectronics, etc. It also provides more advantages compared to ferromagnetic materials, especially those related to a memory storage. This is due to a stored memory produced from magnetic system only consists of 105 bits/cm2 whereas a memory from ferroelectric can be stored up to 108 bits/cm2 . The objectives of this study were 1) to develop BST films on Pt (200) / SiO2 / Si (100) substrates and p-type Si (100) substrates using the chemical solution deposition (CSD) method and 2) to test and study ferroelectric properties, XRD and SEM / EDS structure of the film produced. The research method used was an experiment, starting with the making of BST thin films, then ferroelectric tests, SEM / EDAX tests and XRD tests. The results of ferroelectric test show that all samples have ferroelectric properties. Therefore, annealing temperature affected a remanent polarization value and the coercive area of the sample. Regarding a memory application, BST (BAxSR1-XTIO3)1 M sample with 900°C of annealing temperature is the best material to be used since they have a high remanent polarization and a low coercive field.