A synthesis of BAxSR1-xTIO3 film and characterization of ferroelectric properties and its extension as random access memory


Ferroelectric material is generally used in engineering fields for such purposes as sensors, microelectronics, etc. It also provides more advantages compared to ferromagnetic materials, especially those related to a memory storage. This is due to a stored memory produced from magnetic system only consists of 105 bits/cm2 whereas a memory from ferroelectric can be stored up to 108 bits/cm2 . The objectives of this study were 1) to develop BST films on Pt (200) / SiO2 / Si (100) substrates and p-type Si (100) substrates using the chemical solution deposition (CSD) method and 2) to test and study ferroelectric properties, XRD and SEM / EDS structure of the film produced. The research method used was an experiment, starting with the making of BST thin films, then ferroelectric tests, SEM / EDAX tests and XRD tests. The results of ferroelectric test show that all samples have ferroelectric properties. Therefore, annealing temperature affected a remanent polarization value and the coercive area of the sample. Regarding a memory application, BST (BAxSR1-XTIO3)1 M sample with 900°C of annealing temperature is the best material to be used since they have a high remanent polarization and a low coercive field.