Model for the formation of GaAs-Au axial nanowire heterostructures under flash lamp annealing

Semiconductor-metal nanowire heterostructures have attracted a particular interest over the last decade. However, they often suffer from low interface and crystalline quality. Here, we present a model for the formation of GaAs-Au axial nanowire heterostructures from GaAs/Au core-shell nanowires encapsulated into SiO₂ under flash lamp annealing, as described in the previous work. The model reveals the basic mechanism and establishes the main control parameters of the process which enable high quality GaAs-Au heterostructures. It can also be used for the optimization of similar processes in a wide range of material combinations.