Study of optical resistance of a bulk β-Ga2O3 crystal

The optical resistance and geometric parameters of the damaged region under the action of laser radiation on bulk β-Ga₂O₃ crystal were studied and calculated depending on the power and frequency of laser irradiation. The sample of the crystal for the study was grown by the Czochralski method and prepared by method of cleaving along the (100) plane. The optical resistance was calculated by the Liu method using the laser irradiation and ablation parameters. The experiment determined the threshold for laser damage under pulses of 1030 nm wavelength and 224 fs duration; with a beam spot size of 9.6 μm. The threshold energy density varied from 25.99 to 16.29 J/cm² with pulse numbers varying from 1 to 20,000. The threshold power density of incident radiation ranged from 11.6 to 7.3 GW/cm².