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<article article-type="research-article" dtd-version="1.3" xml:lang="ru">
  <front xmlns:xlink="http://www.w3.org/1999/xlink">
    <journal-meta>
      <journal-id journal-id-type="elibrary">https://www.elibrary.ru/title_about_new.asp?i</journal-id>
      <journal-title-group>
        <journal-title>Materials physics and mechanics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Механика и физика материалов</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">1605-8119</issn>
    </journal-meta>
    <article-meta xmlns:xlink="http://www.w3.org/1999/xlink">
      <article-id pub-id-type="publisher-id">4</article-id>
      <title-group>
        <article-title>InOx Thin Films, Candidates for Novel Chemical and Optoelectronic Applications</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>InOx Thin Films, Candidates for Novel Chemical and Optoelectronic Applications</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Kiriakidis</surname>
            <given-names>G.</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Katsarakis</surname>
            <given-names>N.</given-names>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Bender</surname>
            <given-names>M.</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Gagaoudakis</surname>
            <given-names>E.</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Cimalla</surname>
            <given-names>V.</given-names>
          </name>
          <xref ref-type="aff" rid="aff2"/>
        </contrib>
      </contrib-group>
      <aff id="aff1">Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FO.R.T.H.)</aff>
      <aff id="aff2">IESL/FORTH</aff>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2000-12-05">
        <day>05</day>
        <month>12</month>
        <year>2000</year>
      </pub-date>
      <volume>1</volume>
      <issue>2</issue>
      <fpage>83</fpage>
      <lpage>97</lpage>
      <self-uri xmlns:xlink="http://www.w3.org/1999/xlink" content-type="pdf" xlink:href="https://mpm.spbstu.ru/userfiles/files/2000_1_2_p4.pdf"/>
      <abstract xml:lang="en">
        <p>The potentials of InOx microcrystalline thin films for novel chemical and optoelectronic applications are investigated. In particular, these films are candidates for gas sensor applications due to their sensitivity to reactive gas environments such as ozone. This sensitivity is recorded as the result of the variation of the film conductivity level up to six orders of magnitude, which is attributed to the formation of oxygen vacancies. The microcrystalline nature of the films is investigated by X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) while film surface characteristics are revealed by Atomic Force Microscopy (AFM). Depth profiling is examined by Auger Electron Spectroscopy (AES) while the stoichiometry of the films is determined by Energy Dispersive X-Ray analysis (EDX). Finally, the photorefractive properties of InOx films as well as their potential for the fabrication of optical gratings for novel telecom and waveguide applications are discussed.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>InOx Thin Films</kwd>
        <kwd>Gas Sensor</kwd>
        <kwd>Optoelectronic Devices</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
