A possibility is shown to use GaN/Al2O3 substrates with internal voids fabricated with metal-organic chemical vapor deposition (MOCVD) for the growth of light-emitting structures based on p-n junctions by hydride vapor-phase epitaxy (HVPE). Within the frames of the work, an extensive characterization of the grown HVPE films with n- and p-type conductivity and formed p-n junctions was performed. The results obtained show possibilities that HVPE method offers in respect to the fabrication of the elements of device structures based on GaN.