We consider the task of parametric optimization of the properties for nitride semiconductor light emitting chip. The solution is given in the framework of the selfconsistent electrical/thermal/optical approach. Dependences of radiation power, chip wall plug efficiency (WPE) and current spreading are presented for varying geometry of chip electrodes. The optimization procedure predicts more than 8 % increase in WPE. Original software based on finite volume and ray tracing analysis was used in simulation.