The physical properties of the titanium nitride thin film have been prepared on p-type silicon (100) substrates by at room temperature by reactive DC magnetron sputtering technique using pure Si target with varying oxygen partial pressure during growth at reported. The oxygen partial pressure in the growth chamber is varied between (97 % argon) and (3 % oxygen). The X ray diffraction (XRD) analysis showed that all the films were polycrystalline.