https://www.elibrary.ru/title_about_new.asp?i Materials physics and mechanics Механика и физика материалов 1605-8119 11 Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm Babichev Kurochkin Kolodeznyi Gladyshev Novikov Karachinsky Egorov Connector Optics LLC ITMO University ITMO Univesity 12 12 2015 24 3 284 288

We describe strained semiconductor heterostructures InGaAlAs/InGaAs/InP fabricated by molecular beam epitaxy and designed for active region of laser diode with emission wavelength 1520-1580 nm. Structural and optical properties of the strained semiconductor heterostructures InGaAlAs/InGaAs/InP were studied by X-ray diffraction and photoluminescence analysis. We confirm the possibility to use strained semiconductor heterostructures InGaAlAs/InGaAs/InP for active region of laser diode with 1.6 % lattice mismatch between InGaAs quantum wells and InP substrate.

 laser diode wavelength 1520-1580 nm molecular beam epitaxy strained heterostructures structural properties optical properties