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  <front xmlns:xlink="http://www.w3.org/1999/xlink">
    <journal-meta>
      <journal-id journal-id-type="elibrary">https://www.elibrary.ru/title_about_new.asp?i</journal-id>
      <journal-title-group>
        <journal-title>Materials physics and mechanics</journal-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Механика и физика материалов</trans-title>
        </trans-title-group>
      </journal-title-group>
      <issn pub-type="epub">1605-8119</issn>
    </journal-meta>
    <article-meta xmlns:xlink="http://www.w3.org/1999/xlink">
      <article-id pub-id-type="publisher-id">7</article-id>
      <title-group>
        <article-title>Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures</article-title>
        <trans-title-group xml:lang="ru">
          <trans-title>Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures</trans-title>
        </trans-title-group>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author">
          <name>
            <surname>Polukhin</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Mikhailovskiy</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Rybalko</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Solov'ev</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Petukhov</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Odnoblyudov</surname>
          </name>
          <xref ref-type="aff" rid="aff1"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Kolodeznyi</surname>
          </name>
          <xref ref-type="aff" rid="aff2"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Mikhailov</surname>
          </name>
          <xref ref-type="aff" rid="aff3"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>V.E. Bougrov</surname>
          </name>
          <xref ref-type="aff" rid="aff3"/>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Lipsanen</surname>
          </name>
          <xref ref-type="aff" rid="aff4"/>
        </contrib>
      </contrib-group>
      <aff id="aff1">Peter the Great St. Petersburg Polytechnic University</aff>
      <aff id="aff2">ITMO Univesity</aff>
      <aff id="aff3">ITMO University</aff>
      <aff id="aff4">Aalto University</aff>
      <pub-date publication-format="electronic" date-type="pub" iso-8601-date="2016-12-03">
        <day>03</day>
        <month>12</month>
        <year>2016</year>
      </pub-date>
      <volume>29</volume>
      <issue>1</issue>
      <fpage>71</fpage>
      <lpage>75</lpage>
      <self-uri xmlns:xlink="http://www.w3.org/1999/xlink" content-type="pdf" xlink:href="https://mpm.spbstu.ru/userfiles/files/MPM129_07_polukhin.pdf"/>
      <abstract xml:lang="en">
        <p>Using developed theoretical model of mode synchronization in semiconductor passively mode locked laser (PMLL) we have calculated influence of length and relaxation rate of saturable absorber (SA) on operation regimes of PMLL. We included in consideration the influence of emission rate of free carriers from the levels of dimensional quantization in the SA and found out the optimum operating voltage for PMLL in the fundamental synchronization mode (one harmonic component) as -1.5 - -2 V with optimal length of the SA as 0.637 mm.</p>
      </abstract>
      <kwd-group xml:lang="en">
        <kwd>InGaAlAs/InGaAs/InP heterostructures</kwd>
        <kwd>passively mode locked laser</kwd>
        <kwd>operation regimes</kwd>
        <kwd>absorber characteristics</kwd>
      </kwd-group>
    </article-meta>
  </front>
</article>
