https://www.elibrary.ru/title_about_new.asp?i Materials physics and mechanics Механика и физика материалов 1605-8119 1 10.18149/MPM.5262024_1 Field dependences of the magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms Field dependences of the magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms Rul' N.I. Romanov V.V. Korolev 0000-0002-2973-8645 7006034020 P-4505-2016 Kukushkin S.A. sergey,a.kukushkin@gmail.com Gasumyants Vitaliy Ioffe Institute Peter the Great St. Petersburg Polytechnic University M.N. Mikheev Institute of Metal Physics of the Ural Branch of the Russian Academy of Sciences Institute of Problems of Mechanical Engineering RAS 28 12 2024 52 6 1 7

The measurement data and a general approach to the analysis of the field dependencies of magnetization of the hybrid SiC/Si structure grown by the vacancy method of coordinated substitution of atoms (VMCSA) are presented. The experimental results can be interpreted as a set of additive contributions to the magnetization of the sample. The analysis of the field dependences of magnetization allowed us to identify a presence of paramagnetic impurities in the sample under study and an inclusion that demonstrates characteristic features of ferromagnetic ordering. It is shown than the value of the specific diamagnetic mass susceptibility of the main SiC/Si substance determined from

 silicon carbide VMCSA hybrid structure SQUID external magnetic field magnetization diamagnetism impurity ferromagnetism