<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid>https://www.elibrary.ru/title_about_new.asp?i</titleid>
  <issn>1605-8119</issn>
  <journalInfo lang="ENG">
    <title>Materials physics and mechanics</title>
  </journalInfo>
  <issue>
    <volume>29</volume>
    <number>1</number>
    <altNumber> </altNumber>
    <dateUni>2016</dateUni>
    <pages>1-105</pages>
    <articles>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>1-16</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute for Problems in Mechanical Engineering of Russian Academy of Sciences</orgName>
              <surname>Telyatnik</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Osipov</surname>
              <initials>A.V.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <researcherid>P-4505-2016</researcherid>
              <scopusid>7006034020</scopusid>
              <orcid>0000-0002-2973-8645</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Kukushkin</surname>
              <initials>S.A.</initials>
              <email>sergey,a.kukushkin@gmail.com</email>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">5-th order nonlinear elastic properties of diamond-like single crystals are investigated by computational quantum chemistry, brief introduction to which is supplied. DFT LDA and DFT GGA methods are used to calculate curves of stress dependency on tensile, compressive and shear strains with account of structure relaxation in huge strain range until irreversible deformation occurs at strength limit. Limits of linear elastic proportionality, maximal stresses, regions of necking non-plastic creep are indicated. Relations between linear limits of axial and shear stresses, determined by bilinear approximations of the curves, are represented by Hill's surface as an estimation of plastic anisotropy. Elastic constants are calculated both for finite and small strains. Polynomial approximations are made for dependencies of full energy, crystal volume, Poisson coefficient on strain. Determined parameters can be used for finite-element modelling in mechanical engineering and for reexamination of indentation tests.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>diamond-like single crystals; large strains; nonlinear elastoplastic properties; ab initio modelling</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.1/</furl>
          <file>MPM129_01_telyatnik.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>17-23</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Bobylev</surname>
              <initials>S.V.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>I.A. Ovid’ko</surname>
              <initials>И.А.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">On minimum grain size in ultrafine-grained materials and Gum-metals processed by severe plastic deformation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A theoretical model is suggested which identifies processes whose competition controls a minimum saturation grain size achievable in ultrafine-grained materials and Gum-metals (special titanium alloys) processed by severe plastic deformation. Within this model, typical values of the minimum grain size in various materials are estimated. The estimation is based on (i) the representations that grain refinement in deformed metals occurs through evolution of ensembles of lattice dislocations, and (ii) the experimentally established fact that grain growth in ultrafine-grained metals under severe plastic deformation is typically controlled by stress-induced migration of grain boundaries. Obtained estimates of minimum grain sizes are well consistent with corresponding experimental data.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>ultrafine-grained materials; Gum-metals; severe plastic deformation; grain size; theoretical model</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.2/</furl>
          <file>MPM129_02_bobylev.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>24-31</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mynbaeva</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Pechnikov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Smirnov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Kirilenko</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Raufov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Sitnikova</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Odnoblyudov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>V.E. Bougrov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Mynbaev</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nikolaev</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="011">
            <authorCodes>
              <researcherid>F-1445-2014</researcherid>
              <scopusid>7202768874</scopusid>
              <orcid>0000-0003-3738-408X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Romanov</surname>
              <initials>Alexey</initials>
              <email>alexey.romanov@niuitmo.ru</email>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">A possibility is shown to use substrates with column structure for the growth of thick GaN epitaxial layers with reduced levels of thermoelastic stress and structural defects. A detailed characterization of ~600 µm-thick GaN layers was performed using transmission electron microscopy and optical methods, namely, Raman spectroscopy and photoluminescence. The obtained results showed that the grown material had excellent quality with high uniformity of parameters across the surface of the layers.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>thick GaN epitaxial layers; hydride vapor-phase epitaxy; thermoelastic stress; structural defects</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.3/</furl>
          <file>MPM129_03_mynbaev.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>32-38</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Tula State University</orgName>
              <surname>Treschov</surname>
              <address>Tula, Russian Federation </address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Tula State University</orgName>
              <surname>Spasskaya</surname>
              <address>Tula, Russian Federation </address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Stress-strain state circular cylindrical shell made of materials with complicated properties</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The article is devoted the task of the circular cylindrical shell, is perceiving uniformly distributed load. The shell made of material with complicated properties, it has the property of different resistance and orthotropic. The article shows the system of resolving equations of the problem of research, supplemented by the boundary conditions. Gives the solution of the specific task of bending of the shell, shows most typical results of a study of stress-strain state and the analysis of results of calculation by the classical theory under constant mechanical characteristics with data by the proposed model under different resistant.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>circular cylindrical shell; materials with complicated properties; different resistance; orthotropic; stress-strain state</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.4/</furl>
          <file>MPM129_04_spasskaya.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>39-42</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>St.-Petersburg State University</orgName>
              <surname>Kazarinov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <researcherid>K-4577-2013</researcherid>
              <scopusid>57384230400</scopusid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>St.Petersburg State University</orgName>
              <surname>Petrov</surname>
              <initials>Yuri</initials>
              <email>y.v.petrov@spbu.ru</email>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Institute for Problems of Mechanical Engineering of the RAS</orgName>
              <surname>Bratov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Lavrentyev Institute of Hydrodynamics, Siberian Branch of the RAS</orgName>
              <surname>Slesarenko</surname>
              <address>Novosibirsk, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Numerical investigation of stress intensity factor - crack velocity relation for a dynamically propagating crack</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper incubation time fracture criterion is applied to perform numerical investigation of relation between stress intensity factor (SIF) and crack velocity observed in experiments by J.F. Kalthoff [1] for Araldite B. Two sample geometries were studied – double cantilever beam (DCB) and single edge notched sample (SEN). Quasistatic loading of these samples revealed existence of two branches of stress intensity factor – crack speed dependence corresponding to each sample geometry. Finite element method was used to perform numerical simulations of experiments by J.F Kalthoff and to study non-unique SIF – crack speed dependence.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>a dynamically propagating crack; stress intensity factor; crack velocity</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.5/</furl>
          <file>MPM129_05_kazarinov.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>43-70</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Bobylev</surname>
              <initials>S.V.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>I.A. Ovid’ko</surname>
              <initials>И.А.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Accommodation of grain boundary sliding and fracture toughness enhancement in deformed nanocrystalline materials</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">This review presents theoretical models of grain-boundary sliding accommodation mechanisms in deformed nanomaterials. Described mechanisms serve as the special modes of plastic deformation and also can enhance fracture toughness. Accommodation mechanism via stress-driven splitting and migration of grain boundaries is reviewed. The model describing the effect of accommodated and non-accommodated grain-boundary sliding on fracture toughness of nanomaterials is considered. Also, theoretical model of special accommodating mechanism representing crossover from plastic shear into rotational deformation is proposed.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>deformed nanocrystalline materials; grain boundary sliding; accommodation mechanisms</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.6/</furl>
          <file>MPM129_06_bobylev.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>71-75</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Polukhin</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Mikhailovskiy</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Rybalko</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Solov'ev</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Petukhov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Peter the Great St. Petersburg Polytechnic University</orgName>
              <surname>Odnoblyudov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>ITMO Univesity</orgName>
              <surname>Kolodeznyi</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Mikhailov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>V.E. Bougrov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>Aalto University</orgName>
              <surname>Lipsanen</surname>
              <address>Aalto, Finland</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Using developed theoretical model of mode synchronization in semiconductor passively mode locked laser (PMLL) we have calculated influence of length and relaxation rate of saturable absorber (SA) on operation regimes of PMLL. We included in consideration the influence of emission rate of free carriers from the levels of dimensional quantization in the SA and found out the optimum operating voltage for PMLL in the fundamental synchronization mode (one harmonic component) as -1.5 - -2 V with optimal length of the SA as 0.637 mm.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaAlAs/InGaAs/InP heterostructures; passively mode locked laser; operation regimes; absorber characteristics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.7/</furl>
          <file>MPM129_07_polukhin.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>76-81</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Connector Optics LLC</orgName>
              <surname>Novikov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Connector Optics LLC</orgName>
              <surname>Babichev</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>ITMO Univesity</orgName>
              <surname>Kolodeznyi</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Kurochkin</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Connector Optics LLC</orgName>
              <surname>Gladyshev</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Connector Optics LLC</orgName>
              <surname>Karachinsky</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="007">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nevedomsky</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="008">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Blokhin</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="009">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Blokhin</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="010">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Nadtochiy</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="011">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Egorov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The paper discussed the results of the study of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy as active region for laser diodes of the spectral range 1510-1580 nm. Structural and optical properties of the heterostructures were studied by transmission electron microscopy and photoluminescence techniques. We obtained the dependence of the critical thickness of multiple elastically strained InGaAs layers separated by InGaAlAs barriers on mole fraction of InAs.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>InGaAlAs/InGaAs/InP heterostructures; structural properties; optical properties.</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.8/</furl>
          <file>MPM129_08_novikov.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>82-92</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering of Russian Academy of Sciences</orgName>
              <surname>Redkov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Osipov</surname>
              <initials>A.V.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <authorCodes>
              <researcherid>P-4505-2016</researcherid>
              <scopusid>7006034020</scopusid>
              <orcid>0000-0002-2973-8645</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Kukushkin</surname>
              <initials>S.A.</initials>
              <email>sergey,a.kukushkin@gmail.com</email>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Initial stages of a crystal surface morphology evolution under local impact of lowenergy (of the order of eV and even less) particle beam were studied and a simulation of this process was performed using molecular dynamics. It is shown that change in the crystal morphology can be caused by a vacancy flow towards the spot of the beam incidence along crystallographic directions corresponding to phonon propagation. The mathematical model of this process is proposed and surface profile change rate is estimated. A mechanism of surface roughness development on initially flat surface under impact of uniform particle flux over the whole area is discussed, and morphological stability criterion is found. It is shown that in certain cases one can smooth the surface of the crystal overcoming other mechanisms of spontaneous roughness development.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>crystal morphology; surface profile; flow of low-energy particles; vacancy mechanism; molecular dynamics simulation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.9/</furl>
          <file>MPM129_09_redkov.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>93-100</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Krasinkova</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Atomically flat carbon monolayer as an extremely unstable quasi-2D mesoscopic quantum system</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Strong Coulomb and exchange interactions between π electrons in an atomically flat carbon monolayer result in π electron localization and electron crystal formation and transform the layer into a simplest quasi-two-dimensional mesoscopic quantum system. Such a system must have dielectric and pronounced diamagnetic properties and a high sensitivity to external factors distorting its electron crystals. The instability manifests itself in a tendency of the monolayer to be transformed into a more stable carbon modification with a rolled-up or wrapped-up carbon skeleton, which is observed as a monolayer corrugation. Such a corrugated monolayer is characterized by the presence of excited π electrons, which are responsible for its physical and chemical properties.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>flat carbon monolayer; unstable quasi-2D mesoscopic quantum system</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.10/</furl>
          <file>MPM129_10_krasinkova.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>101-105</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Rozhkov</surname>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="002">
            <authorCodes>
              <researcherid>N-7717-2016</researcherid>
              <scopusid>7005519053</scopusid>
              <orcid>0000-0003-4116-4821</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>Institute of Problems of Mechanical Engineering RAS</orgName>
              <surname>Kolesnikova</surname>
              <initials>Anna</initials>
              <email>anna.kolesnikova.physics@gmail.com</email>
              <address>St. Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Ioffe Institute</orgName>
              <surname>Orlova</surname>
              <initials>T.S.</initials>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>University of Virginia</orgName>
              <surname>Zhigilei</surname>
              <address>USA</address>
            </individInfo>
          </author>
          <author num="005">
            <authorCodes>
              <researcherid>F-1445-2014</researcherid>
              <scopusid>7202768874</scopusid>
              <orcid>0000-0003-3738-408X</orcid>
            </authorCodes>
            <individInfo lang="ENG">
              <orgName>ITMO University</orgName>
              <surname>Romanov</surname>
              <initials>Alexey</initials>
              <email>alexey.romanov@niuitmo.ru</email>
              <address>St.Petersburg, Russia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Disclinated rings as structural units in MD simulation of intercrystallite boundaries in graphene</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this paper, we present a method of assembling intercrystallite boundaries in graphene from well-defined structural units containing the multipoles of non-hexagonal carbon rings (disclinations). We demonstrate that two types of intercrystallite boundaries are possible in graphene: those with misorientation between neighboring regions of the crystal and the others with a zero angle of misorientation. The misorientation is controlled by the type of disclination multipoles composing the intercrystallite boundaries. The energies of "5-8-5" boundaries, consisting of pentagonal and octagonal carbon rings, are calculated by molecular dynamics simulations.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>graphene; intercrystallite boundaries; structural units; carbon rings; disclination</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2016.50.11/</furl>
          <file>MPM129_11_rozhkov.pdf</file>
        </files>
      </article>
    </articles>
  </issue>
</journal>
