<?xml version="1.0" encoding="utf-8"?>
<journal>
  <titleid>https://www.elibrary.ru/title_about_new.asp?i</titleid>
  <issn>1605-8119</issn>
  <journalInfo lang="ENG">
    <title>Materials physics and mechanics</title>
  </journalInfo>
  <issue>
    <volume>4</volume>
    <number>2</number>
    <altNumber> </altNumber>
    <dateUni>2001</dateUni>
    <pages>1-81</pages>
    <articles>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>71-75</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>University of Hyderabad</orgName>
              <surname>Kumar</surname>
              <address>Hyderabad, India</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>University of Hyderabad</orgName>
              <surname>Saraswathi</surname>
              <address>Hyderabad, India</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>University of Hyderabad</orgName>
              <surname>Sunandana</surname>
              <address>Hyderabad, India</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Phase Transitions in Mechanochemically Synthesized CuI Nanocrystals</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">CuI nanocrystals were formed by attrition of Cu and I at ambient temperature. They were characterized by XRD to be zincblende, γ-CuI with an average particle size of 20 – 40 nm. The crystallographic phase transitions from zincblende (γ-phase)-to-distorted wurtzite (β-phase)- to-disordered zincblende (α-phase) were also investigated through non-isothermal DSC. Transition temperatures, enthalpies and entropies of these two-phase transitions as well as their “activation energies” were obtained, treating the phase transitions as “reactions”. It is inferred that attrition imparts a partial cation disorder into CuI, unlike a wet chemical reaction. Attrition essentially prepares the fcc Cu lattice for accommodation of I ions in a weakly covalent arrangement.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Mechanochemically Synthesized Nanocrystals</keyword>
            <keyword>Phase Transitions</keyword>
            <keyword>CuI Nanocrystals</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.1/</furl>
          <file>MPM_4_2_P01.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>76-80</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>IBM Research, Zurich Research Laboratory</orgName>
              <surname>Müller</surname>
              <address>Rüschlikon, Switzerland</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>IBM Research, Zurich Research Laboratory</orgName>
              <surname>Alvarado</surname>
              <address>Rüschlikon, Switzerland</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>IBM Research, Zurich Research Laboratory</orgName>
              <surname>Rossi</surname>
              <address>Rüschlikon, Switzerland</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>IBM Research, Zurich Research Laboratory</orgName>
              <surname>Rieß</surname>
              <address>Rüschlikon, Switzerland</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">STM-based Charge-Injection Spectroscopy at the Organic/Metal Interface</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">We have developed a new method for characterizing the electronic properties of organic thin films and interfaces for electronic device applications. In this scanning tunneling microscope (STM)-based technique, distance versus potential curves are collected at constant tunneling current. Here the STM feedback mechanism causes the tip to penetrate the organic material, allowing the injection barriers at interfaces and charge-transport properties of the organic materials to be determined with nanometer spatial resolution. Moreover, the technique is applicable to organic single and multilayer thin-film samples. Results obtained on thin films of tris(8- hydroxiquinolato)aluminum deposited on Au(111) and Ag(111), and polymorphic copper phthalocyanine deposited on Au(111) substrates will be presented.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Scanning tunneling microscopy</keyword>
            <keyword>STM</keyword>
            <keyword>Organic thin films</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.2/</furl>
          <file>MPM_4_2_P02.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>81-84</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Korea Research Institute of Chemical Technology</orgName>
              <surname>Park</surname>
              <address>Korea</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Korea Research Institute of Chemical Technology</orgName>
              <surname>Kim</surname>
              <address>Korea</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Kyunghee University</orgName>
              <surname>Rhee</surname>
              <address>Korea</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Chungju Nat’l. Univ</orgName>
              <surname>Min</surname>
              <address>Korea</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Filler-Elastomer Interactions: Surface and Mechanical Interfacial Properties of Chemical Surface Treated Silica/Rubber Composites</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Surface-modified silica holds considerable promise in the development of advanced materials for good mechanical properties and stability. In this work, the surface and mechanical interfacial properties of silicas treated with H3 PO4 , KOH, and C8 H18 are investigated. The effect of chemical surface treatments of silica on surface properties and surface energetics is studied in terms of surface functional values and contact angle measurements. The mechanical interfacial properties of the silica/rubber composites are studied by the composite tearing energy (GIIIC). It is found that the development of surface functional groups leads to a significant physical change in silica surfaces, such as, microstructures and surface free energy parameters. This treatment is possibly suitable for silica surfaces to be incorporated in a hydrocarbon rubber matrix, resulting in improving the tearing energy of the resulting composites.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Surface-modified silica</keyword>
            <keyword>Silica/rubber composites</keyword>
            <keyword>composite tearing energy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.3/</furl>
          <file>MPM_4_2_P03.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>85-88</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Lanzhou University</orgName>
              <surname>Liu</surname>
              <address>Lanzhou, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Lanzhou University</orgName>
              <surname>Zhang</surname>
              <address>Lanzhou, China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Lanzhou University</orgName>
              <surname>Yan</surname>
              <address>Lanzhou, China</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Lanzhou University</orgName>
              <surname>Ma</surname>
              <address>Lanzhou, China</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Lanzhou University</orgName>
              <surname>Wang</surname>
              <address>Lanzhou, China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Photoluminescence from SiC Nanocrystals Embedded in SiO2</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Silicon carbide nanocrystals embedded in a SiO2 matrix on monocrystalline Si substrates were prepared by radio frequency (RF) co-sputtering with Si, C and SiO2 targets, and subsequent high-temperature annealing. The structure of the films was determined by Fourier transform infrared spectroscopy. Photoluminescence (PL) from the composite films was studied as a function of annealing temperature. It was found that the PL spectra of the films are very sensitive to the annealing temperature. Blue band (490 nm) and green band (~546 nm) visible PL, originating from SiC nanoparticles and C nanoclusters, respectively, were observed at room temperature.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Silicon carbide</keyword>
            <keyword>SiC</keyword>
            <keyword>SiO2</keyword>
            <keyword>Nanocrystals</keyword>
            <keyword>Photoluminescence</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.4/</furl>
          <file>MPM_4_2_P04.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>89-93</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>University of Melbourne</orgName>
              <surname>Kisler</surname>
              <address>Australia</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>University of Melbourne</orgName>
              <surname>Stevens</surname>
              <address>Australia</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>University of Melbourne</orgName>
              <surname>O’Connor</surname>
              <address>Australia</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Adsorption of Proteins on Mesoporous Molecular Sieves</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Mesoporous molecular sieves such as MCM-41 and SBA-15 have many desirable properties for applications as separations media. Their high surface area (~ 1000 m2. g-1) and tuneable uniform pore size of 1.8 – 40 nm make them ideal for size exclusion separations of proteins and other biological molecules of importance in the food and pharmaceutical industries. However, the stability of MCM-41 in aqueous solution is limited. Therefore, in this work a hydrophobic coating has been applied to siliceous MCM-41 using hexamethyldisilazane to reduce degradation of the structure by hydrolysis and so increase its stability in water. This coating was covalently bound to the pore and particle surfaces and was stable in the presence of water for at least 12 days. The protein adsorption properties of the coated material compare favourably to the uncoated material, with up to 100 % more lysozyme adsorbed on the coated material than untreated MCM-41. The increased capacity and stability of this material make it promising for protein separation based on both size exclusion and chemical selectivity</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Adsorption</keyword>
            <keyword>Proteins</keyword>
            <keyword>Mesoporous Molecular Sieves</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.5/</furl>
          <file>MPM_4_2_P05.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>94-100</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>LeThanh</surname>
              <address>France</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>Yam</surname>
              <address>France</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>Meneceur</surname>
              <address>France</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>Boucaud</surname>
              <address>France</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>Débarre</surname>
              <address>France</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Université Paris-Sud</orgName>
              <surname>Bouchier</surname>
              <address>France</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Kinetic Pathways of the Growth Mode Transition during Ge/Si(001) Heteroepitaxy</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In situ reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy have been combined to analyze the kinetics of the growth mode transition in the Ge/Si(001) system. By performing experiments in the dynamic growth regime and under growth interruption, we clearly establish the existence of intermediate clusters. We show that these clusters are metastable both in view of structural and optical properties. In particular, experiments performed with growth interruption have revealed that the two-dimensional wetting layers undergo a morphological instability well before reaching the critical thickness.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Ge/Si</keyword>
            <keyword>Heteroepitaxy</keyword>
            <keyword>High-energy electron diffraction</keyword>
            <keyword>Atomic force microscopy</keyword>
            <keyword>Photoluminescence spectroscopy</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.6/</furl>
          <file>MPM_4_2_P06.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>101-106</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Zhongshan University</orgName>
              <surname>An</surname>
              <address>China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Zhongshan University</orgName>
              <surname>Li</surname>
              <address>China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Zhongshan University</orgName>
              <surname>Xiong</surname>
              <address>China</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Zhongshan University</orgName>
              <surname>Zhu</surname>
              <address>China</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Northwest Normal University</orgName>
              <surname>Xing</surname>
              <address>China</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Key Lab of Environ. Sci. &amp; Technol. of High Education of Hennan Province</orgName>
              <surname>Liu</surname>
              <address>China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Photoelectrochemical Degradation of Methylene Blue with Nano TiO2 under High Potential Bias</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">In this work, photoelectrocatalytic degradation of wastewater containing methylene blue (MB) was investigated using a novel photoelectrochemical reactor – a three dimensional electrodes-photocatalytic oxidation reactor in which nano TiO2 was used as photocatalyst. The experimental results are assessed in the terms of decolorization and Chemical Oxygen Demanded (COD) removal efficiencies. The experimental results showed that the three dimensional electrodephotocatalytic reactor could effectively destroy MB within a reaction time of 30 min. It was found that the three dimensional electrode technologies under high potential bias have an apparent enhancement effect on the photocatalytic degradation of MB in water with nanometer TiO2 . At a cell voltage of 60.0 V and a concentration of 5 g·l-1 TiO2 , the decolorization and the COD removal efficiencies in the photoelectrochemical process were increased by 21.8% and 14.1%, respectively, compared to those in the single photocatalytic process.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>TiO2</keyword>
            <keyword>Methylene blue</keyword>
            <keyword>Photoelectrochemical Degradation</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.7/</furl>
          <file>MPM_4_2_P07.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>107-110</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Harbin Institute of Technology</orgName>
              <surname>Ding</surname>
              <address>Harbin, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Harbin Institute of Technology</orgName>
              <surname>Zhang</surname>
              <address>Harbin, China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Harbin Institute of Technology</orgName>
              <surname>Han</surname>
              <address>Harbin, China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Hydrothermal Synthesis of Monodispersed Lanthanum Titanate Particles</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">An isothermal hydrothermal reaction scheme has been developed to produce pure, ultrafine crystalline lanthanum titanate from lanthanum nitrate-titanium tetrabutyloxide-wateralcohol. It was found that the pH of the hydrothermal reaction medium and the initial [La]/[Ti] (molar ratio) were critical factors in forming stoichiometric La2/3TiO3 . By varying the pH of the reaction medium, different end products could be obtained. With [La]/[Ti]=0.5, the as-prepared La2/3TiO3 was in the cubic perovskite phase, and the structure did not change when the temperature was increased from room temperature to as high as 1000 °C. The optimum synthesis conditions including the ratio of [La]/[Ti], the concentration of NaOH and the lowest synthesis temperature were investigated. Under hydrothermal conditions, the La2 O3 -3TiO2 system can tolerate the solid solubility of TiO2</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Lanthanum Titanate</keyword>
            <keyword>Monodispersed Particles</keyword>
            <keyword>Hydrothermal Synthesis</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.8/</furl>
          <file>MPM_4_2_P08.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>111-115</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Chongqing University</orgName>
              <surname>Cai</surname>
              <address>Chongqing, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Chongqing University</orgName>
              <surname>Wang</surname>
              <address>Chongqing, China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Chongqing University</orgName>
              <surname>Chen</surname>
              <address>Chongqing, China</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Chongqing University</orgName>
              <surname>Shu</surname>
              <address>Chongqing, China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Effects of STM Tip Movement to the Real Width of an Electric Pulse Acting on the Gap between the Tip and the Sample Surface</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">During the process of nano-lithography on solid material surfaces by a Scanning Tunneling Microscope (STM) system working at constant current mode, while a high-voltage electric pulse acts on the gap between the tip and the sample surface, the feedback circuit causes the tip to withdraw swiftly, resulting in a reduction of effective pulse-width. In the experiment presented in this paper, a specially designed and computer controlled temporary "holding" function can maintain the tip position and the tip-sample distance during the whole period when the highvoltage pulse acts, so that the effective pulse-width can be accurately measured. An experiment of lithography on a graphite surface in air found, for the first time, the threshold of effective pulsewidth to be (0.04±0.01) µS, with a voltage amplitude of 4 V.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Scanning Tunneling Microscope</keyword>
            <keyword>STM</keyword>
            <keyword>Nano-lithography</keyword>
            <keyword>Graphite</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.9/</furl>
          <file>MPM_4_2_P09.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>116-120</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Metallurgical and Materials Engineering Department, I. I. T.</orgName>
              <surname>Nandi</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Department of Metallurgy, B. E. College (D.U.)</orgName>
              <surname>Chattopadhyay</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Metallurgical and Materials Engineering Department, I. I. T.</orgName>
              <surname>Pabi</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Metallurgical and Materials Engineering Department, I. I. T.</orgName>
              <surname>I. Manna</surname>
              <address>India</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Development of Amorphous and Nano-Aluminade Dispersed Al-Matrix Composites by Mechanical Alloying</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Mechanical alloying of Al65Cu35-xNbx (x = 5 – 25 at. % Nb) by planetary ball milling yields amorphous and/or nanocrystalline products. Microstructure of the milled product in different stages of milling has been characterized by x-ray diffraction, transmission electron microscopy and differential scanning calorimetry. The results indicate that the present alloys may yield completely/partially amorphous and/or nano-aluminide dispersed Al-rich nanocrystalline or amorphous matrix composites by controlled mechanical alloying.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Amorphous Composites </keyword>
            <keyword>Nano-Aluminade Composites</keyword>
            <keyword>Mechanical Alloying</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.10/</furl>
          <file>MPM_4_2_P10.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>121-124</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>East China University of Science and Technology</orgName>
              <surname>Chen</surname>
              <address>Shanghai, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>East China University of Science and Technology</orgName>
              <surname>Lu</surname>
              <address>Shanghai, China</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>East China University of Science and Technology</orgName>
              <surname>Tao</surname>
              <address>Shanghai, China</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>East China University of Science and Technology</orgName>
              <surname>Dai </surname>
              <address>Shanghai, China</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>East China University of Science and Technology</orgName>
              <surname>Gu</surname>
              <address>Shanghai, China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Novel Photocatalyst Immobilized on Springs and Packed Photoreactor</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">TiO2 photocatalysts immobilized on novel supports of Pyrex glass springs using the dip-coating technique were prepared. A packed photoreactor was developed with advantages such as uniform-distributed light throughout the reactor, high ratio of illuminated surface areas to the reactor volume, low pressure drop, and no mass transfer limitation. This photoreactor provides a promising candidate to scale-up for the commercial application.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Photoreactors</keyword>
            <keyword>TiO2</keyword>
            <keyword>Dip-coating technique</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.11/</furl>
          <file>MPM_4_2_P11.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>125-128</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Institute of Chemistry, Chinese Academy of Sciences</orgName>
              <surname>Qiu</surname>
              <address>Beijing, China</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Institute of Chemistry, Chinese Academy of Sciences</orgName>
              <surname>Wan</surname>
              <address>Beijing, China</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Nanostructures of Polyaniline Doped with a Novel Dopant</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">4-(3-(4-((4-nitrophenyl)azo)phenyloxy)propyl)aminobenzene sulfonic acid (C3-ABSA) was designed and synthesized as a novel dopant of polyaniline (PANI). Structural characterization by FTIR, 1 H NMR and Second Ion Mass Spectrum (SIMS) showed that C3-ABSA has a molecular formula of C21H20N4 O6 S. Nanostructural PANI (e.g. nanorod or nanotube) was synthesized by a template-free method in the presence of C3-ABSA as a dopant. It was found that the size and room-temperature conductivity of the resulting PANI-(C3-ABSA) strongly depend on the synthetic conditions, in particular, nanotubes or nanorods with 50~300 nm in diameter and roomtemperature conductivity of 1.1 S/cm were obtained when water (1.0 mL) was added before polymerization. It was proposed that C3-ABSA plays a “template-like” role in forming PANI-(C3- ABSA) nanostructures due to surfactant function of C3-ABSA. The molecular structures were characterized by FTIR, UV-Vis. absorption and X-ray diffraction, showing the main chain and electronic structure are identical to the doped PANI, but exhibit partial crystallinity.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Polyaniline</keyword>
            <keyword>PANI</keyword>
            <keyword>Nanostructures</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.12/</furl>
          <file>MPM_4_2_P12.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>129-133</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Sun</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Tay</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Li</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>National University of Singapore</orgName>
              <surname>Sun</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Lau</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
          <author num="006">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Chen</surname>
              <address>Singapore</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Bandgap Expansion of a Nanometric Semiconductor</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">With the miniaturization of a solid, the band gap expands and the energy levels of the core bands shift towards higher binding energy, and subsequently, properties such as dielectrics change. These intriguing phenomena have been found new applications in microelectronics and photonics for devices. However, the underlying mechanism for these phenomena is still under debate. Here we present a new approach showing that the bond contraction at the surface and the rise in the surface-to-volume ratio of the nanosolid are responsible for these phenomena as the spontaneous bond contraction enhances the interatomic binding energy, which results in the corresponding derivatives.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Semiconductor</keyword>
            <keyword>Bandgap</keyword>
            <keyword>Microelectronics</keyword>
            <keyword>Photonics</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.13/</furl>
          <file>MPM_4_2_P13.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>134-137</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Indian Institute of Science</orgName>
              <surname>Mimani </surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Indian Institute of Science</orgName>
              <surname>Patil</surname>
              <address>India</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Solution Combustion Synthesis of Nanoscale Oxides and their Composites</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Nanosize alumina, ceria, yttria, zirconia CeO2 -ZrO2 (OSC), t-ZrO2 -Al2 O3 (ZTA) and Y2 O3 - ZrO2 (YSZ) have been prepared by the combustion of aqueous solutions containing corresponding metal nitrate, ammonium nitrate and glycine redox mixtures. The combustion is non-flaming (smoldering) and yields voluminous oxides with large surface area (10-30 m2 g-1) and nanosize (10-50 nm). Powder XRD and TEM have been used to characterize the products of combustion.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Oxides</keyword>
            <keyword>Oxides Composites</keyword>
            <keyword>Nanoscale</keyword>
            <keyword>Solution Combustion Synthesis</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.14/</furl>
          <file>MPM_4_2_P14.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>138-142</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Industrial Technology Research Institute</orgName>
              <surname>Lin</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Industrial Technology Research Institute</orgName>
              <surname>Lai</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Industrial Technology Research Institute</orgName>
              <surname>Lai</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Industrial Technology Research Institute</orgName>
              <surname>Yang</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Industrial Technology Research Institute</orgName>
              <surname>A. K. Li</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Characteristic of Field Emission from Carbon Nanotubes Synthesized from Different Sources</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The field emission of carbon nanotubes (CNTs) synthesized from different sources is investigated. Comparisons are made between graphite with Ni metal as catalyst and polycyclic aromatic hydrocarbon as precursor in arc discharge. Key parameters are also evaluated to obtain high quality and high yield CNT for application of field emission display. Cathode deposits are examined using SEM and HRTEM to determine microstructure. Raman spectroscopy is also used to study carbon structure. Electron field emission characteristic is measured with the diode method. Microstructural investigation provides evidence that both metal catalyst and precursor not only can be used to synthesize CNTs but also to enhance their production rate. From field emission measurement, the lowest onset field is about 1.0 V/mm and can be attributed to highly sharp tips and high density of CNTs. Based on microstructure characterization and field emission measurement, influence on field emission of CNT synthesized from different sources is discussed.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Carbon</keyword>
            <keyword>Nanotubes</keyword>
            <keyword>Field Emission</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.15/</furl>
          <file>MPM_4_2_P15.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>143-147</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Electrochemical Materials Science Division, Central Electrochemical Research Institute</orgName>
              <surname>Jayachandran</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Electrochemical Materials Science Division, Central Electrochemical Research Institute</orgName>
              <surname>Paramasivam</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="003">
            <individInfo lang="ENG">
              <orgName>Electrochemical Materials Science Division, Central Electrochemical Research Institute</orgName>
              <surname>Murali</surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="004">
            <individInfo lang="ENG">
              <orgName>Electrochemical Materials Science Division, Central Electrochemical Research Institute</orgName>
              <surname>Trivedi </surname>
              <address>India</address>
            </individInfo>
          </author>
          <author num="005">
            <individInfo lang="ENG">
              <orgName>Electrochemical Materials Science Division, Central Electrochemical Research Institute</orgName>
              <surname>Raghavan</surname>
              <address>India</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Synthesis of Porous Silicon Nanostructures for Photoluminescent Devices</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">Porous structures were formed on p-Si wafers under various anodization conditions in ethanolic solutions containing aqueous hydrofluoric acid. The observed photoluminescence at room temperature depends on the anodization current density and the anodization time. Polyaniline (PA) was incorporated into the pores of the porous silicon (PSi) structure by in-situ electrodeposition. The porous structure formation has been confirmed using XRD and SEM studies. Currentvoltage (I-V) characteristics of the polyaniline filled PSi (PA/PSi) structure showed the possibility of using PA as an ohmic contact for PSi based devices.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Silicon</keyword>
            <keyword>Porous Nanostructures</keyword>
            <keyword>Synthesis</keyword>
            <keyword>Photoluminescent Devices</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.16/</furl>
          <file>MPM_4_2_P16.pdf</file>
        </files>
      </article>
      <article>
        <artType>RAR</artType>
        <langPubl>RUS</langPubl>
        <pages>148-151</pages>
        <authors>
          <author num="001">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Xu</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
          <author num="002">
            <individInfo lang="ENG">
              <orgName>Nanyang Technological University</orgName>
              <surname>Liao</surname>
              <address>Taiwan</address>
            </individInfo>
          </author>
        </authors>
        <artTitles>
          <artTitle lang="ENG">Molecular and Continuum Mechanics Modeling of Graphene Deformation</artTitle>
        </artTitles>
        <abstracts>
          <abstract lang="ENG">The elastic response of a circular single graphene sheet with a diameter of 65.32 Å under a transverse central load is studied using molecular dynamics (MD), closed-form elasticity solution (EL), and finite element method (FEM). Results showed that the mismatch in deformation profiles between MD calculations and continuum mechanics methods is about 8~9% at a central deflection of one graphene layer thickness. The mismatch reduces to less than 5% when the central deflection increased to a 10-layer thickness. The mismatch rooted from mechanics: MD predicts predominant bond stretching mode while continuum mechanics predict a bending to stretching transition process under increasing deflection. Results suggest that continuum mechanics can yield predictions close to molecular mechanics under large deformation for certain loading configurations when modes of deformation are similar.</abstract>
        </abstracts>
        <codes/>
        <keywords>
          <kwdGroup lang="ENG">
            <keyword>Graphene</keyword>
            <keyword>Deformation</keyword>
            <keyword>Modeling</keyword>
          </kwdGroup>
        </keywords>
        <files>
          <furl>https://mpm.spbstu.ru/article/2001.6.17/</furl>
          <file>MPM_4_2_P17.pdf</file>
        </files>
      </article>
    </articles>
  </issue>
</journal>
