Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

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We describe strained semiconductor heterostructures InGaAlAs/InGaAs/InP fabricated by molecular beam epitaxy and designed for active region of laser diode with emission wavelength 1520-1580 nm. Structural and optical properties of the strained semiconductor heterostructures InGaAlAs/InGaAs/InP were studied by X-ray diffraction and photoluminescence analysis. We confirm the possibility to use strained semiconductor heterostructures InGaAlAs/InGaAs/InP for active region of laser diode with 1.6 % lattice mismatch between InGaAs quantum wells and InP substrate.