Porous structures were formed on p-Si wafers under various anodization conditions in ethanolic solutions containing aqueous hydrofluoric acid. The observed photoluminescence at room temperature depends on the anodization current density and the anodization time. Polyaniline (PA) was incorporated into the pores of the porous silicon (PSi) structure by in-situ electrodeposition. The porous structure formation has been confirmed using XRD and SEM studies. Currentvoltage (I-V) characteristics of the polyaniline filled PSi (PA/PSi) structure showed the possibility of using PA as an ohmic contact for PSi based devices.