Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

Авторы:

I.I. Novikov L.Ya. Karachinsky A.Yu. Egorov A.V. Babichev A.S. Kurochkin Е.С. Колодезный A.G. Gladyshev

Аннотация:

We describe strained semiconductor heterostructures InGaAlAs/InGaAs/InP fabricated by molecular beam epitaxy and designed for active region of laser diode with emission wavelength 1520-1580 nm. Structural and optical properties of the strained semiconductor heterostructures InGaAlAs/InGaAs/InP were studied by X-ray diffraction and photoluminescence analysis. We confirm the possibility to use strained semiconductor heterostructures InGaAlAs/InGaAs/InP for active region of laser diode with 1.6 % lattice mismatch between InGaAs quantum wells and InP substrate.