Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication

Авторы:
S.A. Blokhin R.V. Levin V.S. Epoletov A.G. Kuzmenkov A.A. Blokhin M.A. Bobrov Y.N. Kovach N.A. Maleev E.V. Nikitina V.V. Andryushkin A.P. Vasil’ev K.O. Voropaev V.M. Ustinov
Аннотация:

In this paper was presented the research results of the dependence of the InGaAs surface layer thickness on the process of Zn diffusion into InGaAs/InP heterostructures from a diethylzink source. One-dimensional distribution profiles of electrically active dopants were obtained by electrochemical volt-capacitive profiling. The influence of technological parameters (process time, temperature, and pressure in the reactor) on the hole concentration and the depth of the p-type dopant was studied. The principal possibility of simultaneously forming a highly doped InGaAs:Zn layer has been experimentally shown due to the higher Zn solubility limit in InGaAs compared to InP and to implement a two-stage p-type dopant profile in one Zn diffusion process by controlling the thickness of the InGaAs surface layer.