Polycrystalline films of phosphors Cd(1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties

doi:10.18720/MPM.4242019_4

Polycrystalline films of phosphors Cd(1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties

Authors:

S.P. Bogdanov S.P. Bogdanov A.V. Redkov

Abstract:

Polycrystalline phosphor film Cd_(1-x-y-z) (Cu_yAg_z) Zn_xS was grown on the surface of the Si/nano-SiC heterostructure obtained by the unique method of substitution of atoms. The structural, phonon (vibrational) properties of the film, as well as its morphology were studied. X-ray phase analysis (XRD) showed that the phase composition is represented by a matrix of solid solution of cubic syngony and impurity phases formed during precipitation: sodium sulfate (Na₂SO₄) of orthorhombic syngony and sodium cadmium sulfide (Na₆Cd₇S₁₀) of monoclinic syngony. The Raman spectroscopy (RS) method confirmed the components of the polycrystalline phosphor film, including its phase composition, determined by the X-ray phase analysis method.