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Redkov
Affiliation
Institute of Problems of Mechanical Engineering of Russian Academy of Sciences
St.Petersburg, Russia
Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism
- Year: 2016
- Volume: 29
- Issue: 1
- 4
- 2753
- Pages: 82-92
Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffer layers
- Year: 2017
- Volume: 32
- Issue: 3
- 6
- 2766
- Pages: 262-271
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Year: 2018
- Volume: 36
- Issue: 1
- 50
- 3820
- Pages: 39-52
Polycrystalline films of phosphors Cd (1-x-y-z) (CuyAgz) ZnxS on the silicon substrate with the silicon carbide buffer layer: structure and properties
- Year: 2019
- Volume: 42
- Issue: 4
- 7
- 2948
- Pages: 396-406