Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content

Authors:
D.A. Zakgeim A.V. Nashchekin I.G. Smirnova D.A. Bauman A.E. Romanov V.E. Bougrov P.N. Butenko D.I. Panov A.V. Kremleva
Abstract:

We propose a technuque of liquid-phase growth of (AlxGa1-x)2O3 crystals with variable and controlled Al content in them. When using the Czochralski growth process Ga2O3 melt was dosed by sapphire seed. By applying of the special growth zone and the regulating the process parameters, a series of crystal samples with Al content varying from 0.51 to 4.68 % at. was obtained. In addition to the standard setting of the geometry and weight of the crystals using the process parameters, with an increase of the Al content in the melt, it is possible to control the color, transparency and crystallinity of the fabricated samples.