MPM
    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
    Since 2000
    ISSN 1605-8119
    enАнглийский
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    AuthorV.E. Bougrov
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    V.E. Bougrov
    V.E. Bougrov
    Affiliation
    ITMO University
    St.Petersburg, Russia

    Parametric Modeling of Light Emitting Structures Based on III-Nitrides

    S.S. SuslovK.A. VinogradovaV.E. BougrovM.A. OdnoblyudovRomanov A.E.
    • Year: 2012
    • Volume: 14
    • Issue: 1
    • 7
    • 3104
    • Pages: 78-86

    Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum

    K.A. VinogradovaS.N. LipnitskayaK.D. MynbaevV.E. BougrovA.R. KovshM.A. OdnoblyudovV.I. NikolaevRomanov A.E.
    • Year: 2013
    • Volume: 17
    • Issue: 2
    • 5
    • 2911
    • Pages: 111-120

    Heat transfer simulation and retrofit LED lamp plastic heat sink material optimization

    I.N. IvukinV.E. BougrovA.R. KovshM.A. OdnoblyudovA.G. ShalkovskiyRomanov A.E.
    • Year: 2013
    • Volume: 17
    • Issue: 2
    • 11
    • 3024
    • Pages: 178-182

    Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor

    K.A. VinogradovaL.A. NikulinaK.D. MynbaevA.R. KovshM.A. OdnoblyudovV.I. NikolaevV.E. Bougrov
    • Year: 2013
    • Volume: 18
    • Issue: 2
    • 5
    • 2941
    • Pages: 135-142

    Temperature stability of colored LED elements

    K.A. VinogradovaL.A. NikulinaS.S. BraslavskiiE.A. SolovievaK.D. MynbaevV.I. NikolaevRomanov A.E.V.E. Bougrov
    • Year: 2013
    • Volume: 18
    • Issue: 2
    • 3
    • 3014
    • Pages: 143-147

    Inorganic composite «phosphor in glass» based on highly refractive LED-silicate matrix for white LEDs

    V.A. AseevJ.V. TuzovaA.Y. BibikE.V. KolobkovaYa.A. NekrasovaN.V. NikonorovM.A. ShvalevaRomanov A.E.V.E. Bougrov
    • Year: 2014
    • Volume: 21
    • Issue: 3
    • 7
    • 3178
    • Pages: 242-247

    Thermal analysis of phosphor containing silicone layer in high power LEDs

    E.S. KolodeznyiI.N. IvukinV.S. SerebryakovaV.E. BougrovRomanov A.E.
    • Year: 2014
    • Volume: 21
    • Issue: 3
    • 3
    • 2949
    • Pages: 283-287

    Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

    M.G. MynbaevaA.I. PechnikovSh.Sh. SharofidinovV.E. BougrovK.D. MynbaevS.I. StepanovM.A. OdnoblyudovV.I. NikolaevRomanov A.E.
    • Year: 2015
    • Volume: 22
    • Issue: 1
    • 3
    • 3089
    • Pages: 30-38

    Thick GaN layers on silicon substrate

    Sh.Sh. SharofidinovA.A. GolovatenkoI.P. NikitinaN.V. SeredovaM.G. MynbaevaV.E. BougrovM.A. OdnoblyudovS.I. StepanovV.I. Nikolaev
    • Year: 2015
    • Volume: 22
    • Issue: 1
    • 7
    • 2843
    • Pages: 53-58

    GaN growth ON β-Ga2O3 substrates by HVPE

    V.I. NikolaevA.I. PechnikovV.N. MaslovA.A. GolovatenkoV.M. KrymovS.I. StepanovN.K. ZhumashevV.E. BougrovRomanov A.E.
    • Year: 2015
    • Volume: 22
    • Issue: 1
    • 14
    • 3239
    • Pages: 59-58

    Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

    M.A. RozhkovE.S. KolodeznyiA.M. SmirnovV.E. BougrovRomanov A.E.
    • Year: 2015
    • Volume: 24
    • Issue: 2
    • 39
    • 3479
    • Pages: 194-200

    Simulation operation regimes of passive mode-locked laser based on InGaAlAs/InGaAs/InP heterostructures

    I.S. PolukhinG.A. MikhailovskiyD.A. RybalkoYu.V. Solov'evM.A. OdnoblyudovA.E. GubenkoD.A. LivshitsA.N. FirsovA.N. KirsyaevA.A. EfremovV.E. Bougrov
    • Year: 2016
    • Volume: 27
    • Issue: 1
    • 3
    • 2659
    • Pages: 74-78

    Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

    M.G. MynbaevaA.I. PechnikovA.N. SmirnovD.A. KirilenkoS.Ch. RaufovA.A. SitnikovaM.A. OdnoblyudovV.E. BougrovK.D. MynbaevV.I. NikolaevRomanov A.E.
    • Year: 2016
    • Volume: 29
    • Issue: 1
    • 13
    • 3188
    • Pages: 24-31

    Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

    I.S. PolukhinG.A. MikhailovskiyD.A. RybalkoYu.V. Solov'evE.P. PetukhovM.A. OdnoblyudovE.S. KolodeznyiA.K. MikhailovV.E. BougrovH. Lipsanen
    • Year: 2016
    • Volume: 29
    • Issue: 1
    • 3
    • 2835
    • Pages: 71-75

    Electrical and optical properties of transparent conducting ZnO: Al/AgNP multilayer films

    E.V. Shirshneva-VaschenkoI.M. SosninR.K. NuryevI.A. GladskikhT.G. LiashenkoV.E. BougrovRomanov A.E.
    • Year: 2016
    • Volume: 29
    • Issue: 2
    • 7
    • 3136
    • Pages: 145-149

    Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

    A.V. KremlevaD.A. KirilenkoV.I. NikolaevA.I. PechnikovS.I. StepanovM.A. OdnoblyudovV.E. BougrovRomanov A.E.
    • Year: 2017
    • Volume: 32
    • Issue: 2
    • 9
    • 3360
    • Pages: 178-185

    Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector

    E.S. KolodeznyiI.I. NovikovA.G. GladyshevS.S. RochasK.D. SharipoL.Ya. KarachinskyA.Yu. EgorovV.E. Bougrov
    • Year: 2017
    • Volume: 32
    • Issue: 2
    • 27
    • 3357
    • Pages: 194-197

    Fabrication of p-type transparent oxide films with delafossite structure by sol-gel processing

    E.V. Shirshneva-VaschenkoL.A. SokuraT.G. LiashenkoE. PodlesnovV.E. BougrovRomanov A.E.
    • Year: 2017
    • Volume: 32
    • Issue: 3
    • 9
    • 3560
    • Pages: 288-292

    Relation of the optical properties of boron copper-containing glasses on the concentration of lithium

    P.S. ShirshnevZh.G. SnezhnaiaE.V. Shirshneva-VaschenkoRomanov A.E.V.E. Bougrov
    • Year: 2018
    • Volume: 40
    • Issue: 1
    • 10
    • 3282
    • Pages: 78-83

    The influence of gamma rays radiation on optically induced luminescence of copper-containing potassium-lithium-borate glass

    P.S. ShirshnevSpiridonov V.A.Panov D.I.E.V. Shirshneva-VaschenkoA.R. GafarovaR.M. EreminaRomanov A.E.V.E. Bougrov
    • Year: 2019
    • Volume: 42
    • Issue: 2
    • 26
    • 3512
    • Pages: 198-203

    Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method

    A.V. KremlevaD.A. KirilenkoI.G. SmirnovaV.E. BougrovRomanov A.E.
    • Year: 2019
    • Volume: 42
    • Issue: 6
    • 12
    • 3697
    • Pages: 797-801

    Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content

    P.N. ButenkoPanov D.I.A.V. KremlevaD.A. ZakgeimA.V. NashchekinI.G. SmirnovaBauman D.A.Romanov A.E.V.E. Bougrov
    • Year: 2019
    • Volume: 42
    • Issue: 6
    • 36
    • 3739
    • Pages: 802-807

    On cracking in thick GaN layers grown on sapphire substrates

    M.G. MynbaevaA.A. SitnikovaA.N. SmirnovK.D. MynbaevH. LipsanenA.V. KremlevaBauman D.A.V.E. BougrovRomanov A.E.
    • Year: 2020
    • Volume: 44
    • Issue: 1
    • 28
    • 3627
    • Pages: 1-7

    Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy

    A.V. KremlevaSh.Sh. SharofidinovA.M. SmirnovE. PodlesnovDorogov M.V.M.A. OdnoblyudovV.E. BougrovRomanov A.E.
    • Year: 2020
    • Volume: 44
    • Issue: 2
    • 68
    • 3981
    • Pages: 164-171

    Multi-step dilatational inclusion in an elastically isotropic cylinder

    Kolesnikova A.L.Romanov A.E.Gutkin M.Yu.V.E. Bougrov
    • Year: 2021
    • Volume: 47
    • Issue: 5
    • 42
    • 3640
    • Pages: 697-705

    Thin films of gallium oxide obtained by spray-pyrolysis: method and properties

    Panov D.I.Zhang X. Spiridonov V.A.Azina L.V.R.K. NuryevPrasolov N.D.L.A. SokuraBauman D.A.V.E. BougrovRomanov A.E.
    • Year: 2022
    • Volume: 50
    • Issue: 1
    • 94
    • 3226
    • Pages: 107-117