V.E. Bougrov
  • Affiliation
    ITMO University
  • St.Petersburg, Russia

Parametric Modeling of Light Emitting Structures Based on III-Nitrides

  • Year: 2012
  • Volume: 14
  • Issue: 1
  • 3
  • 301
  • Pages: 78-86

Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum

  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 2
  • 276
  • Pages: 111-120

Heat transfer simulation and retrofit LED lamp plastic heat sink material optimization

  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 3
  • 265
  • Pages: 178-182

Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor

  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 1
  • 245
  • Pages: 135-142

Temperature stability of colored LED elements

  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 0
  • 276
  • Pages: 143-147

Inorganic composite "phosphor in glass" based on highly refractive LED-silicate matrix for white LEDs

  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 1
  • 317
  • Pages: 242-247

Thermal analysis of phosphor containing silicone layer in high power LEDs

  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 0
  • 279
  • Pages: 283-287

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 0
  • 304
  • Pages: 30-38

Thick GaN layers on silicon substrate

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 3
  • 253
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 7
  • 323
  • Pages: 59-58

Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

  • Year: 2015
  • Volume: 24
  • Issue: 2
  • 9
  • 320
  • Pages: 194-200

Simulation operation regimes of passive mode-locked laser based on InGaAlAs/InGaAs/InP heterostructures

  • Year: 2016
  • Volume: 27
  • Issue: 1
  • 0
  • 208
  • Pages: 74-78

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 1
  • 319
  • Pages: 24-31

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 0
  • 256
  • Pages: 71-75

Electrical and optical properties of transparent conducting ZnO:Al/AgNP multilayer films

  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 0
  • 318
  • Pages: 145-149

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 4
  • 352
  • Pages: 178-185

Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 4
  • 318
  • Pages: 194-197

Fabrication of p-type transparent oxide films with delafossite structure by sol-gel processing

  • Year: 2017
  • Volume: 32
  • Issue: 3
  • 2
  • 356
  • Pages: 288-292

Relation of the optical properties of boron copper-containing glasses on the concentration of lithium

  • Year: 2018
  • Volume: 40
  • Issue: 1
  • 2
  • 318
  • Pages: 78-83

The influence of gamma rays radiation on optically induced luminescence of copper-containing potassium-lithium-borate glass

  • Year: 2019
  • Volume: 42
  • Issue: 2
  • 4
  • 375
  • Pages: 198-203

Structural characterization of bulk (AlXGa1-X)2O3 crystals grown by the ózochralski method

  • Year: 2019
  • Volume: 42
  • Issue: 6
  • 7
  • 426
  • Pages: 797-801

Czochralski grown (AlxGa1-x)2O3 crystals with variable Al content

  • Year: 2019
  • Volume: 42
  • Issue: 6
  • 15
  • 424
  • Pages: 802-807

On cracking in thick GaN layers grown on sapphire substrates

  • Year: 2020
  • Volume: 44
  • Issue: 1
  • 10
  • 392
  • Pages: 1-7

Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy

  • Year: 2020
  • Volume: 44
  • Issue: 2
  • 16
  • 458
  • Pages: 164-171