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Dvoretsky
Affiliation
A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of RAS
Novosibirsk, Russia
Photoluminescence of Hg0.5Cd0.5Te structures grown with molecular-beam epitaxy
- Year: 2017
- Volume: 32
- Issue: 1
- 8
- 3298
- Pages: 88-93

