Articles by keywords "GaN films; semi-polar GaN; V-defects; etch pits; silicon carbide films; heterostructures; wide-band semiconductors; nanostructures"
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
- Year: 2014
- Volume: 21
- Issue: 3
- Pages: 266-274