Articles by keywords "GaN films; semi-polar GaN; V-defects; etch pits; silicon carbide films; heterostructures; wide-band semiconductors; nanostructures"

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 6
  • 489
  • Pages: 266-274