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MPM
Materials physics and mechanics
Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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A.V. Osipov
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Latest issues
2022
,
Volume 50
Issue 3
2022
,
Volume 50
Issue 2
2022
,
Volume 50
Issue 1
2022
,
Volume 49
Issue 1
A.V. Osipov
Affiliation
Institute of Problems of Mechanical Engineering RAS
St.Petersburg, Russia
Critical Current Density in Polycrystalline High-Tc Superconductors with Disordered Tilt Boundaries
S.A. Kukushkin
A.V. Osipov
I.A. Ovid’ko
Year: 2000
Volume: 1
Issue: 1
1
628
Pages: 49-53
Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation
V.N. Bessolov
S.A. Kukushkin
A.V. Osipov
A.V. Luk'yanov
Year: 2003
Volume: 6
Issue: 1
3
622
Pages: 1-12
Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution
V.N. Bessolov
E.V. Konenkova
S.A. Kukushkin
A.V. Myasoedov
S.N. Rodin
A.V. Osipov
M.P. Shcheglov
Year: 2014
Volume: 21
Issue: 1
4
571
Pages: 71-77
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
V.N. Bessolov
E.V. Konenkova
A.V. Zubkova
A.V. Osipov
Orlova T.S.
S.N. Rodin
S.A. Kukushkin
Year: 2014
Volume: 21
Issue: 3
8
676
Pages: 266-274
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
G.V. Benemanskaya
P.A. Dementev
S.A. Kukushkin
M.N. Lapushkin
A.V. Osipov
B. Senkovskiy
S.N. Timoshnev
Year: 2015
Volume: 22
Issue: 2
5
648
Pages: 183-190
Microhardness study of two-layer nanostructures by a nanoindentation method
A.S. Grashchenko
S.A. Kukushkin
A.V. Osipov
Year: 2015
Volume: 24
Issue: 1
3
618
Pages: 35-40
Approach for electrochemical deposition of copper-graphite films
V.G. Konakov
O.Yu. Kurapova
N.N. Novik
A.S. Grashchenko
A.V. Osipov
I.Yu. Archakov
Year: 2015
Volume: 24
Issue: 1
4
594
Pages: 61-71
Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse
R.S. Telyatnik
A.V. Osipov
S.A. Kukushkin
Year: 2016
Volume: 29
Issue: 1
3
705
Pages: 1-16
Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism
A.V. Redkov
A.V. Osipov
S.A. Kukushkin
Year: 2016
Volume: 29
Issue: 1
1
687
Pages: 82-92
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
G.V. Benemanskaya
P.A. Dementev
S.A. Kukushkin
M.N. Lapushkin
A.V. Osipov
S.N. Timoshnev
Year: 2017
Volume: 32
Issue: 2
6
975
Pages: 108-116
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
V.V. Kidalov
S.A. Kukushkin
A.V. Osipov
A.V. Redkov
A.S. Grashchenko
I.P. Soshnikov
M.E. Boiko
M.D. Sharkov
A.F. Dyadenchuk
Year: 2018
Volume: 36
Issue: 1
23
865
Pages: 39-52
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
S.A. Kukushkin
A.V. Osipov
I.A. Kasatkin
V.Y. Mikhailovskii
A.I. Romanychev
Year: 2019
Volume: 42
Issue: 1
3
804
Pages: 30-39
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
S.A. Kukushkin
A.V. Osipov
E.V. Osipova
Year: 2019
Volume: 42
Issue: 2
8
801
Pages: 178-182
Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms
Bagraev N.T.
S.A. Kukushkin
A.V. Osipov
Romanov V.V.
Klyachkin L.E.
Malyarenko A.M.
Rul' N.I.
Year: 2022
Volume: 50
Issue: 1
18
206
Pages: 66-73