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MPM
Materials physics and mechanics
Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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A.V. Osipov
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Latest issues
2022
,
Volume 48
Issue 1
2021
,
Volume 47
Issue 6
2021
,
Volume 47
Issue 5
2021
,
Volume 47
Issue 4
A.V. Osipov
Affiliation
Institute of Problems of Mechanical Engineering RAS
St.Petersburg, Russia
Critical Current Density in Polycrystalline High-Tc Superconductors with Disordered Tilt Boundaries
S.A. Kukushkin
A.V. Osipov
I.A. Ovid’ko
Year: 2000
Volume: 1
Issue: 1
1
433
Pages: 49-53
Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation
V.N. Bessolov
S.A. Kukushkin
A.V. Osipov
A.V. Luk'yanov
Year: 2003
Volume: 6
Issue: 1
1
429
Pages: 1-12
Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution
V.N. Bessolov
E.V. Konenkova
S.A. Kukushkin
A.V. Myasoedov
S.N. Rodin
A.V. Osipov
M.P. Shcheglov
Year: 2014
Volume: 21
Issue: 1
3
383
Pages: 71-77
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures
V.N. Bessolov
E.V. Konenkova
A.V. Zubkova
A.V. Osipov
S.N. Rodin
S.A. Kukushkin
Year: 2014
Volume: 21
Issue: 3
6
466
Pages: 266-274
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice
G.V. Benemanskaya
P.A. Dementev
S.A. Kukushkin
M.N. Lapushkin
A.V. Osipov
B. Senkovskiy
S.N. Timoshnev
Year: 2015
Volume: 22
Issue: 2
5
462
Pages: 183-190
Microhardness study of two-layer nanostructures by a nanoindentation method
A.S. Grashchenko
S.A. Kukushkin
A.V. Osipov
Year: 2015
Volume: 24
Issue: 1
3
438
Pages: 35-40
Approach for electrochemical deposition of copper-graphite films
V.G. Konakov
O.Yu. Kurapova
N.N. Novik
A.S. Grashchenko
A.V. Osipov
I.Yu. Archakov
Year: 2015
Volume: 24
Issue: 1
4
401
Pages: 61-71
Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse
R.S. Telyatnik
A.V. Osipov
S.A. Kukushkin
Year: 2016
Volume: 29
Issue: 1
2
462
Pages: 1-16
Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism
A.V. Redkov
A.V. Osipov
S.A. Kukushkin
Year: 2016
Volume: 29
Issue: 1
1
475
Pages: 82-92
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces
G.V. Benemanskaya
P.A. Dementev
S.A. Kukushkin
M.N. Lapushkin
A.V. Osipov
S.N. Timoshnev
Year: 2017
Volume: 32
Issue: 2
6
731
Pages: 108-116
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
V.V. Kidalov
S.A. Kukushkin
A.V. Osipov
A.V. Redkov
A.S. Grashchenko
I.P. Soshnikov
M.E. Boiko
M.D. Sharkov
A.F. Dyadenchuk
Year: 2018
Volume: 36
Issue: 1
20
608
Pages: 39-52
Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates
S.A. Kukushkin
A.V. Osipov
I.A. Kasatkin
V.Y. Mikhailovskii
A.I. Romanychev
Year: 2019
Volume: 42
Issue: 1
2
558
Pages: 30-39
Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal
S.A. Kukushkin
A.V. Osipov
E.V. Osipova
Year: 2019
Volume: 42
Issue: 2
7
550
Pages: 178-182