A.V. Osipov
  • Affiliation
    Institute of Problems of Mechanical Engineering RAS
  • St.Petersburg, Russia

Critical Current Density in Polycrystalline High-Tc Superconductors with Disordered Tilt Boundaries

  • Year: 2000
  • Volume: 1
  • Issue: 1
  • 0
  • 319
  • Pages: 49-53

Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation

  • Year: 2003
  • Volume: 6
  • Issue: 1
  • 0
  • 307
  • Pages: 1-12

Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution

  • Year: 2014
  • Volume: 21
  • Issue: 1
  • 1
  • 255
  • Pages: 71-77

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 3
  • 325
  • Pages: 266-274

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice

  • Year: 2015
  • Volume: 22
  • Issue: 2
  • 0
  • 316
  • Pages: 183-190

Microhardness study of two-layer nanostructures by a nanoindentation method

  • Year: 2015
  • Volume: 24
  • Issue: 1
  • 1
  • 315
  • Pages: 35-40

Approach for electrochemical deposition of copper-graphite films

  • Year: 2015
  • Volume: 24
  • Issue: 1
  • 3
  • 271
  • Pages: 61-71

Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 1
  • 348
  • Pages: 1-16

Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 0
  • 349
  • Pages: 82-92

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 1
  • 577
  • Pages: 108-116

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 8
  • 407
  • Pages: 39-52

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

  • Year: 2019
  • Volume: 42
  • Issue: 1
  • 0
  • 392
  • Pages: 30-39

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

  • Year: 2019
  • Volume: 42
  • Issue: 2
  • 5
  • 382
  • Pages: 178-182