MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author A.V. Osipov
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A.V. Osipov
  • Affiliation
    Institute of Problems of Mechanical Engineering RAS
  • St.Petersburg, Russia

Critical Current Density in Polycrystalline High-Tc Superconductors with Disordered Tilt Boundaries

S.A. Kukushkin A.V. Osipov I.A. Ovid’ko
  • Year: 2000
  • Volume: 1
  • Issue: 1
  • 1
  • 628
  • Pages: 49-53

Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation

V.N. Bessolov S.A. Kukushkin A.V. Osipov A.V. Luk'yanov
  • Year: 2003
  • Volume: 6
  • Issue: 1
  • 3
  • 622
  • Pages: 1-12

Semipolar GaN on Si(001): the role of SiC buffer layer synthesized by method of substrate atom substitution

V.N. Bessolov E.V. Konenkova S.A. Kukushkin A.V. Myasoedov S.N. Rodin A.V. Osipov M.P. Shcheglov
  • Year: 2014
  • Volume: 21
  • Issue: 1
  • 4
  • 571
  • Pages: 71-77

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

V.N. Bessolov E.V. Konenkova A.V. Zubkova A.V. Osipov Orlova T.S. S.N. Rodin S.A. Kukushkin
  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 8
  • 676
  • Pages: 266-274

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice

G.V. Benemanskaya P.A. Dementev S.A. Kukushkin M.N. Lapushkin A.V. Osipov B. Senkovskiy S.N. Timoshnev
  • Year: 2015
  • Volume: 22
  • Issue: 2
  • 5
  • 648
  • Pages: 183-190

Microhardness study of two-layer nanostructures by a nanoindentation method

A.S. Grashchenko S.A. Kukushkin A.V. Osipov
  • Year: 2015
  • Volume: 24
  • Issue: 1
  • 3
  • 618
  • Pages: 35-40

Approach for electrochemical deposition of copper-graphite films

V.G. Konakov O.Yu. Kurapova N.N. Novik A.S. Grashchenko A.V. Osipov I.Yu. Archakov
  • Year: 2015
  • Volume: 24
  • Issue: 1
  • 4
  • 594
  • Pages: 61-71

Ab initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals upon large strainse

R.S. Telyatnik A.V. Osipov S.A. Kukushkin
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 3
  • 705
  • Pages: 1-16

Evolution of crystal morphology under flow of low-energy particles: vacancy mechanism

A.V. Redkov A.V. Osipov S.A. Kukushkin
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 1
  • 687
  • Pages: 82-92

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces

G.V. Benemanskaya P.A. Dementev S.A. Kukushkin M.N. Lapushkin A.V. Osipov S.N. Timoshnev
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 6
  • 975
  • Pages: 108-116

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

V.V. Kidalov S.A. Kukushkin A.V. Osipov A.V. Redkov A.S. Grashchenko I.P. Soshnikov M.E. Boiko M.D. Sharkov A.F. Dyadenchuk
  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 23
  • 865
  • Pages: 39-52

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

S.A. Kukushkin A.V. Osipov I.A. Kasatkin V.Y. Mikhailovskii A.I. Romanychev
  • Year: 2019
  • Volume: 42
  • Issue: 1
  • 3
  • 804
  • Pages: 30-39

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

S.A. Kukushkin A.V. Osipov E.V. Osipova
  • Year: 2019
  • Volume: 42
  • Issue: 2
  • 8
  • 801
  • Pages: 178-182

Room-temperature quantum oscillations of static magnetic susceptibility of silicon-carbide epitaxial layers grown on a silicon substrate by the method of the coordinated substitution of atoms

Bagraev N.T. S.A. Kukushkin A.V. Osipov Romanov V.V. Klyachkin L.E. Malyarenko A.M. Rul' N.I.
  • Year: 2022
  • Volume: 50
  • Issue: 1
  • 18
  • 206
  • Pages: 66-73