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Gladyshev
Affiliation
Connector Optics LLC
St.Petersburg, Russia
Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520−1580 nm
- Year: 2015
- Volume: 24
- Issue: 3
- 6
- 1799
- Pages: 284-288
The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy
- Year: 2016
- Volume: 29
- Issue: 1
- 8
- 1887
- Pages: 76-81
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
- Year: 2017
- Volume: 32
- Issue: 2
- 21
- 2325
- Pages: 194-197