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Kolodeznyi
Affiliation
ITMO Univesity
St.Petersburg, Russia
Thermal analysis of phosphor containing silicone layer in high power LEDs
- Year: 2014
- Volume: 21
- Issue: 3
- 3
- 2635
- Pages: 283-287
Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors
- Year: 2015
- Volume: 24
- Issue: 2
- 34
- 3156
- Pages: 194-200
Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520−1580 nm
- Year: 2015
- Volume: 24
- Issue: 3
- 6
- 2406
- Pages: 284-288
Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
- Year: 2016
- Volume: 29
- Issue: 1
- 3
- 2537
- Pages: 71-75
The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy
- Year: 2016
- Volume: 29
- Issue: 1
- 8
- 2479
- Pages: 76-81
Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector
- Year: 2017
- Volume: 32
- Issue: 2
- 22
- 3015
- Pages: 194-197