E.S. Kolodeznyi
  • Affiliation
    ITMO Univesity
  • St.Petersburg, Russia

Thermal analysis of phosphor containing silicone layer in high power LEDs

  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 2
  • 510
  • Pages: 283-287

Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

  • Year: 2015
  • Volume: 24
  • Issue: 2
  • 18
  • 627
  • Pages: 194-200

Molecular beam epitaxy grown strained heterostructures for active region of laser diode with emission wavelength 1520-1580 nm

  • Year: 2015
  • Volume: 24
  • Issue: 3
  • 2
  • 482
  • Pages: 284-288

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 2
  • 505
  • Pages: 71-75

The structural properties of elastically strained InGaAlAs/InGaAs/InP heterostructures grown by molecular beam epitaxy

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 2
  • 462
  • Pages: 76-81

Study of antireflection coatings for high speed 1.3 -1.55 µm InGaAs/InP PIN photodetector

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 573
  • Pages: 194-197