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Scheglov
Affiliation
Ioffe Institute
Saint Petersburg, Russia
HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer
- Year: 2021
- Volume: 47
- Issue: 4
- 105
- 2893
- Pages: 577-581
Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire
- Year: 2023
- Volume: 51
- Issue: 1
- 120
- 1867
- Pages: 1-9
Effect of high-temperature annealing on the internal friction and optical transmittance of single crystal gallium oxide
- Year: 2024
- Volume: 52
- Issue: 5
- 20
- 2294
- Pages: 48-54