A.I. Pechnikov
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 692
  • Pages: 30-38

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 9
  • 693
  • Pages: 59-58

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 3
  • 724
  • Pages: 24-31

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 29
  • 973
  • Pages: 166-171

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 752
  • Pages: 178-185

Wear resistance of α- and β- gallium oxide coatings

  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 38
  • 767
  • Pages: 52-58

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 50
  • 1150
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 62
  • 437
  • Pages: 301-307