A.I. Pechnikov
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 466
  • Pages: 30-38

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 9
  • 473
  • Pages: 59-58

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 2
  • 501
  • Pages: 24-31

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 13
  • 681
  • Pages: 166-171

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 7
  • 543
  • Pages: 178-185

Wear resistance of α- and β- gallium oxide coatings

  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 36
  • 511
  • Pages: 52-58

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 38
  • 282
  • Pages: 577-581