S.I. Stepanov
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 687
  • Pages: 30-38

Thick GaN layers on silicon substrate

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 5
  • 576
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 9
  • 690
  • Pages: 59-58

Shape memory Cu-Al-Ni single crystals for application in rotary actuators

  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 11
  • 653
  • Pages: 83-87

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 747
  • Pages: 178-185

Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test

  • Year: 2020
  • Volume: 46
  • Issue: 1
  • 35
  • 693
  • Pages: 42-49

Jumping at strain recovery in shape memory Cu-Al-Ni single crystals

  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 45
  • 786
  • Pages: 59-64

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 50
  • 1149
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 62
  • 429
  • Pages: 301-307