MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author V.I. Nikolaev
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V.I. Nikolaev
  • Affiliation
    Ioffe Institute
  • St.Petersburg, Russia

Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum

K.A. Vinogradova S.N. Lipnitskaya K.D. Mynbaev V.E. Bougrov A.R. Kovsh M.A. Odnoblyudov V.I. Nikolaev A.E. Romanov
  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 3
  • 839
  • Pages: 111-120

Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor

K.A. Vinogradova L.A. Nikulina K.D. Mynbaev A.R. Kovsh M.A. Odnoblyudov V.I. Nikolaev V.E. Bougrov
  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 2
  • 775
  • Pages: 135-142

Temperature stability of colored LED elements

K.A. Vinogradova L.A. Nikulina S.S. Braslavskii E.A. Solovieva K.D. Mynbaev V.I. Nikolaev A.E. Romanov V.E. Bougrov
  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 1
  • 871
  • Pages: 143-147

Single crystals of β-Ga2O3, grown from the melt of gallium and aluminum oxides

V.N. Maslov V.M. Krymov E.V. Kalashnikov V.I. Nikolaev
  • Year: 2014
  • Volume: 21
  • Issue: 2
  • 16
  • 904
  • Pages: 194-199

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

M.G. Mynbaeva A.I. Pechnikov Sh.Sh. Sharofidinov V.E. Bougrov K.D. Mynbaev S.I. Stepanov M.A. Odnoblyudov V.I. Nikolaev A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 2
  • 899
  • Pages: 30-38

Thick GaN layers on silicon substrate

Sh.Sh. Sharofidinov A.A. Golovatenko I.P. Nikitina N.V. Seredova M.G. Mynbaeva V.E. Bougrov M.A. Odnoblyudov S.I. Stepanov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 6
  • 788
  • Pages: 53-58

GaN growth ON β-Ga2O3 substrates by HVPE

V.I. Nikolaev A.I. Pechnikov V.N. Maslov A.A. Golovatenko V.M. Krymov S.I. Stepanov N.K. Zhumashev V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 10
  • 916
  • Pages: 59-58

Shape memory deformation recovery features in Cu-Al-Ni single crystals

A.I. Averkin P.N. Yakushev E.V. Trofimova G.P. Zograf R.B.Timashov S.A. Pulnev S.B. Kustov V.I. Nikolaev
  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 10
  • 850
  • Pages: 64-68

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

M.G. Mynbaeva A.I. Pechnikov A.N. Smirnov D.A. Kirilenko S.Ch. Raufov A.A. Sitnikova M.A. Odnoblyudov V.E. Bougrov K.D. Mynbaev V.I. Nikolaev A.E. Romanov
  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 6
  • 946
  • Pages: 24-31

Investigation of single crystal Cu-Al-Ni alloy bending force elements for linear motors

A.I. Priadko S.A. Pulnev V.I. Nikolaev A.V. Rogov O.A. Shmakov S.N. Golyandin A.V. Chikiryaka
  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 5
  • 859
  • Pages: 158-165

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

L.I. Guzilova A.S. Grashchenko A.I. Pechnikov V.N. Maslov D.V. Zav'yalov V.L. Abdrachmanov A.E. Romanov V.I. Nikolaev
  • Year: 2016
  • Volume: 29
  • Issue: 2
  • 43
  • 1411
  • Pages: 166-171

Shape memory Cu-Al-Ni single crystals for application in rotary actuators

A.I. Priadko V.I. Nikolaev S.A. Pulnev S.I. Stepanov A.V. Rogov A.V. Chikiryaka O.A. Shmakov
  • Year: 2017
  • Volume: 32
  • Issue: 1
  • 11
  • 872
  • Pages: 83-87

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

A.V. Kremleva D.A. Kirilenko V.I. Nikolaev A.I. Pechnikov S.I. Stepanov M.A. Odnoblyudov V.E. Bougrov A.E. Romanov
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 8
  • 998
  • Pages: 178-185

Burst-like shape memory recovery and calorimetric effect in Cu-Al-Ni alloy single crystals at cyclic test

L.I. Guzilova V.I. Nikolaev P.N. Yakushev S.I. Stepanov R.B.Timashov A.V. Chikiryaka S.A. Pulnev
  • Year: 2020
  • Volume: 46
  • Issue: 1
  • 35
  • 896
  • Pages: 42-49

Wear resistance of α- and β- gallium oxide coatings

P.N. Butenko L.I. Guzilova A.V. Chikiryaka A.I. Pechnikov A.S. Grashchenko Pozdnyakov V.I. Nikolaev
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 46
  • 995
  • Pages: 52-58

Jumping at strain recovery in shape memory Cu-Al-Ni single crystals

V.I. Nikolaev R.B.Timashov S.A. Pulnev L.I. Guzilova P.N. Butenko S.I. Stepanov
  • Year: 2021
  • Volume: 47
  • Issue: 1
  • 48
  • 1038
  • Pages: 59-64

HVPE growth of corundum-structured α-Ga2O3 on sapphire substrates with α-Cr2O3 buffer layer

S.I. Stepanov V.I. Nikolaev Almaev A.V. A.I. Pechnikov Scheglov M.P. A.V. Chikiryaka Kushnarev B.O. Polyakov A.Y.
  • Year: 2021
  • Volume: 47
  • Issue: 4
  • 67
  • 1434
  • Pages: 577-581

Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Yakovlev N.N. Almaev A.V. P.N. Butenko Mikhaylov A.N. A.I. Pechnikov S.I. Stepanov R.B.Timashov A.V. Chikiryaka V.I. Nikolaev
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 75
  • 675
  • Pages: 301-307

Epitaxial stabilization of α-Ga2O3 layers grown on r-plane sapphire

V.I. Nikolaev Polyakov A.Y. S.I. Stepanov A.I. Pechnikov L.I. Guzilova Scheglov M.P. A.V. Chikiryaka
  • Year: 2023
  • Volume: 51
  • Issue: 1
  • 87
  • 609
  • Pages: 1-9

The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals

Zarichny A.A. P.N. Butenko M.E. Boiko M.D. Sharkov V.I. Nikolaev
  • Year: 2023
  • Volume: 51
  • Issue: 3
  • 9
  • 84
  • Pages: 46-51