Latest issues
- 2026, Volume 54 Issue 1
- 2025, Volume 53 Issue 6
- 2025, Volume 53 Issue 5
- 2025, Volume 53 Issue 4
Bobrov
Affiliation
Ioffe Institute
St. Petersburg, Russia
Zn diffusion from vapor phase into InGaAs/InP heterostructure using diethylzinc as a p-dopant source
- Year: 2023
- Volume: 51
- Issue: 3
- 33
- 1876
- Pages: 38-45
Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication
- Year: 2023
- Volume: 51
- Issue: 4
- 33
- 1674
- Pages: 66-75
Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor
- Year: 2023
- Volume: 51
- Issue: 5
- 57
- 2058
- Pages: 142-151