MPM
    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
    Since 2000
    ISSN 1605-8119
    enАнглийский
    Version for the visually impaired
    AuthorVasil’ev
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    Vasil’ev
    Vasil’ev
    Affiliation
    Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences (RAS)
    Saint Petersburg, Russia

    Zn diffusion from vapor phase into InGaAs/InP heterostructure using diethylzinc as a p-dopant source

    S.A. BlokhinLevin R.V. Epoletov V.S. Kuzmenkov A.G.A.A. BlokhinBobrov M.A.Kovach Y.N. Maleev N.A. Andryushkin V.V.Vasil’ev A.P. Voropaev K.O.
    • Year: 2023
    • Volume: 51
    • Issue: 3
    • 34
    • 2239
    • Pages: 38-45

    Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication

    S.A. BlokhinLevin R.V. Epoletov V.S. Kuzmenkov A.G.A.A. BlokhinBobrov M.A.Kovach Y.N. Maleev N.A. Nikitina E.V.Andryushkin V.V.Vasil’ev A.P. Voropaev K.O.
    • Year: 2023
    • Volume: 51
    • Issue: 4
    • 33
    • 1903
    • Pages: 66-75

    Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor

    S.A. BlokhinLevin R.V. Epoletov V.S. Kuzmenkov A.G.A.A. BlokhinBobrov M.A.Kovach Y.N. Maleev N.A. Prasolov N.D.Kulagina M.M.Guseva Yu.А.Zadiranov Yu.М.Nikitina E.V.Andryushkin V.V.Vasil’ev A.P. Voropaev K.O.
    • Year: 2023
    • Volume: 51
    • Issue: 5
    • 60
    • 2315
    • Pages: 142-151