MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
en Английский
Version for the visually impaired
Author Vasil’ev A.P.
Submit Your Paper
Latest issues
Vasil’ev A.P.
  • Affiliation
    Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences (RAS)
  • Saint Petersburg, Russia

Zn diffusion from vapor phase into InGaAs/InP heterostructure using diethylzinc as a p-dopant source

S.A. Blokhin Levin R.V. Epoletov V.S. Kuzmenkov A.G. A.A. Blokhin Bobrov M.A. Kovach Y.N. Maleev N.A. Andryushkin V.V. Vasil’ev A.P. Voropaev K.O.
  • Year: 2023
  • Volume: 51
  • Issue: 3
  • 25
  • 750
  • Pages: 38-45

Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication

S.A. Blokhin Levin R.V. Epoletov V.S. Kuzmenkov A.G. A.A. Blokhin Bobrov M.A. Kovach Y.N. Maleev N.A. Nikitina E.V. Andryushkin V.V. Vasil’ev A.P. Voropaev K.O.
  • Year: 2023
  • Volume: 51
  • Issue: 4
  • 22
  • 746
  • Pages: 66-75

Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor

S.A. Blokhin Levin R.V. Epoletov V.S. Kuzmenkov A.G. A.A. Blokhin Bobrov M.A. Kovach Y.N. Maleev N.A. Prasolov N.D. Kulagina M.M. Guseva Yu.А. Zadiranov Yu.М. Nikitina E.V. Andryushkin V.V. Vasil’ev A.P. Voropaev K.O.
  • Year: 2023
  • Volume: 51
  • Issue: 5
  • 40
  • 891
  • Pages: 142-151