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- 2026,Volume 54Issue 4
- 2026,Volume 54Issue 3
- 2026,Volume 54Issue 2
- 2026,Volume 54Issue 1
Bobrov
Affiliation
Ioffe Institute
St. Petersburg, Russia
Zn diffusion from vapor phase into InGaAs/InP heterostructure using diethylzinc as a p-dopant source
- Year: 2023
- Volume: 51
- Issue: 3
- 48
- 3082
- Pages: 38-45
Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication
- Year: 2023
- Volume: 51
- Issue: 4
- 34
- 2471
- Pages: 66-75
Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor
- Year: 2023
- Volume: 51
- Issue: 5
- 70
- 3001
- Pages: 142-151

