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Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
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Author Bessolov
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Bessolov
Bessolov
Affiliation
Ioffe Institute
St.Petersburg, Russia

Heteroepitaxy of Gallium Nitride Layers: the Role of Initial Stages in Film Formation

V.N. Bessolov S.A. Kukushkin A.V. Osipov A.V. Luk'yanov
  • Year: 2003
  • Volume: 6
  • Issue: 1
  • 7
  • 1878
  • Pages: 1-12

Semipolar GaN on Si (001): the role of SiC buffer layer synthesized by method of substrate atom substitution

V.N. Bessolov E.V. Konenkova S.A. Kukushkin A.V. Myasoedov S.N. Rodin A.V. Osipov M.P. Shcheglov
  • Year: 2014
  • Volume: 21
  • Issue: 1
  • 6
  • 1889
  • Pages: 71-77

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si (111) and SiC/Si (100) heterostructures

V.N. Bessolov E.V. Konenkova A.V. Zubkova A.V. Osipov Orlova T.S. S.N. Rodin S.A. Kukushkin
  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 9
  • 2153
  • Pages: 266-274