MPM
    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
    Since 2000
    ISSN 1605-8119
    enАнглийский
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    AuthorShcheglov
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    Shcheglov
    Shcheglov
    Affiliation
    Ioffe Institute
    St.Petersburg, Russia

    Semipolar GaN on Si (001): the role of SiC buffer layer synthesized by method of substrate atom substitution

    V.N. BessolovE.V. KonenkovaS.A. KukushkinA.V. MyasoedovS.N. RodinA.V. OsipovM.P. Shcheglov
    • Year: 2014
    • Volume: 21
    • Issue: 1
    • 7
    • 2492
    • Pages: 71-77