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Stempitsky
Affiliation
Belarusian State University of Informatics and Radioelectronics
Minsk, Belarus
Device and technology simulation of IGBT on SOI structure
- Year: 2014
- Volume: 20
- Issue: 2
- 9
- 1863
- Pages: 111-117
Modeling of microbial synthesis processes considering inoculums immobilization in porous nanostructured media
- Year: 2014
- Volume: 20
- Issue: 2
- 3
- 1801
- Pages: 130-141
Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures
- Year: 2018
- Volume: 39
- Issue: 1
- 25
- 2494
- Pages: 8-14
Direct exchange interaction of cobalt chains in zinc oxide: model approach
- Year: 2018
- Volume: 39
- Issue: 1
- 11
- 2169
- Pages: 15-20
Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application
- Year: 2018
- Volume: 39
- Issue: 1
- 30
- 2393
- Pages: 27-34
Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures
- Year: 2018
- Volume: 39
- Issue: 1
- 8
- 1783
- Pages: 92-101
Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model
- Year: 2019
- Volume: 41
- Issue: 1
- 14
- 2205
- Pages: 19-29
Magnetic properties of low-dimensional MAX3 (M=Cr, A=Ge, Si and X=S, Se, Te) systems
- Year: 2022
- Volume: 49
- Issue: 1
- 64
- 1890
- Pages: 73-84
First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N
- Year: 2022
- Volume: 49
- Issue: 1
- 49
- 1834
- Pages: 97-107