V. Stempitsky
-
AffiliationBelarusian State University of Informatics and Radioelectronics
- Minsk, Belarus
Latest issues
- 2024, Volume 52 Issue 4
- 2024, Volume 52 Issue 3
- 2024, Volume 52 Issue 2
- 2024, Volume 52 Issue 1
Device and technology simulation of IGBT on SOI structure
- Year: 2014
- Volume: 20
- Issue: 2
- 8
- 1085
- Pages: 111-117
Modeling of microbial synthesis processes considering inoculums immobilization in porous nanostructured media
- Year: 2014
- Volume: 20
- Issue: 2
- 2
- 1026
- Pages: 130-141
Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures
- Year: 2018
- Volume: 39
- Issue: 1
- 22
- 1545
- Pages: 8-14
Direct exchange interaction of cobalt chains in zinc oxide: model approach
- Year: 2018
- Volume: 39
- Issue: 1
- 10
- 1354
- Pages: 15-20
Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application
- Year: 2018
- Volume: 39
- Issue: 1
- 28
- 1461
- Pages: 27-34
Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures
- Year: 2018
- Volume: 39
- Issue: 1
- 7
- 1043
- Pages: 92-101
Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model
- Year: 2019
- Volume: 41
- Issue: 1
- 12
- 1327
- Pages: 19-29
Magnetic properties of low-dimensional MAX3 (M=Cr, A=Ge, Si and X=S, Se, Te) systems
- Year: 2022
- Volume: 49
- Issue: 1
- 56
- 968
- Pages: 73-84
First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N
- Year: 2022
- Volume: 49
- Issue: 1
- 47
- 952
- Pages: 97-107