I. Lovshenko
  • Affiliation
    Belarusian State University of Informatics and Radioelectronics
  • St.Petersburg, Russia

Device and technology simulation of IGBT on SOI structure

  • Year: 2014
  • Volume: 20
  • Issue: 2
  • 7
  • 511
  • Pages: 111-117

Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 6
  • 504
  • Pages: 92-101