V. Stempitsky
  • Affiliation
    Belarusian State University of Informatics and Radioelectronics
  • Minsk, Belarus

Device and technology simulation of IGBT on SOI structure

  • Year: 2014
  • Volume: 20
  • Issue: 2
  • 6
  • 507
  • Pages: 111-117

Modeling of microbial synthesis processes considering inoculums immobilization in porous nanostructured media

  • Year: 2014
  • Volume: 20
  • Issue: 2
  • 2
  • 495
  • Pages: 130-141

Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 17
  • 772
  • Pages: 8-14

Direct exchange interaction of cobalt chains in zinc oxide: model approach

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 7
  • 713
  • Pages: 15-20

Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 15
  • 808
  • Pages: 27-34

Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 6
  • 501
  • Pages: 92-101

Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model

  • Year: 2019
  • Volume: 41
  • Issue: 1
  • 7
  • 644
  • Pages: 19-29

Magnetic properties of low-dimensional MAX3 (M=Cr, A=Ge, Si and X=S, Se, Te) systems

  • Year: 2022
  • Volume: 49
  • Issue: 1
  • 24
  • 246
  • Pages: 73-84

First-principles study of anisotropic thermal conductivity of GaN, AlN, and Al0.5Ga0.5N

  • Year: 2022
  • Volume: 49
  • Issue: 1
  • 21
  • 241
  • Pages: 97-107