V. Stempitsky
  • Affiliation
    Belarusian State University of Informatics and Radioelectronics
  • Minsk, Belarus

Device and technology simulation of IGBT on SOI structure

  • Year: 2014
  • Volume: 20
  • Issue: 2
  • 5
  • 386
  • Pages: 111-117

Modeling of microbial synthesis processes considering inoculums immobilization in porous nanostructured media

  • Year: 2014
  • Volume: 20
  • Issue: 2
  • 2
  • 386
  • Pages: 130-141

Electronic and optic properties of transition metal dichalcogenides (MoS2, WSe2) and graphene heterostructures

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 16
  • 641
  • Pages: 8-14

Direct exchange interaction of cobalt chains in zinc oxide: model approach

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 7
  • 582
  • Pages: 15-20

Ab initio simulation of graphene interaction with SiO2 substrate for nanoelectronics application

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 13
  • 576
  • Pages: 27-34

Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures

  • Year: 2018
  • Volume: 39
  • Issue: 1
  • 5
  • 381
  • Pages: 92-101

Leakage current in AlGaN Schottky diode in terms of the phonon-assisted tunneling model

  • Year: 2019
  • Volume: 41
  • Issue: 1
  • 5
  • 499
  • Pages: 19-29