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Lovshenko
Affiliation
Belarusian State University of Informatics and Radioelectronics
St.Petersburg, Russia
Device and technology simulation of IGBT on SOI structure
- Year: 2014
- Volume: 20
- Issue: 2
- 9
- 1837
- Pages: 111-117
Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures
- Year: 2018
- Volume: 39
- Issue: 1
- 8
- 1748
- Pages: 92-101