Статьи по ключевому слову "silicon carbide; epitaxial films SiC on Si; epitaxy; gallium nitride films; aluminum nitride films; thin films growth; porous silicon substrate"
Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates
- Год: 2018
- Том: 36
- Выпуск: 1
- 29
- 1308
- Страницы: 39-52