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    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
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    Dyadenchuk
    Dyadenchuk
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    Berdyansk State Pedagogical University
    Berdyansk, Ukraine

    Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

    V.V. KidalovS.A. KukushkinA.V. OsipovA.V. RedkovA.S. GrashchenkoI.P. SoshnikovM.E. BoikoM.D. SharkovA.F. Dyadenchuk
    • Year: 2018
    • Volume: 36
    • Issue: 1
    • 50
    • 3820
    • Pages: 39-52
    Materials physics and mechanics
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