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V.M. Ustinov
Affiliation
Ioffe Institute
St.Petersburg, Russia
Heteroepitaxial Growth of InAs on Si: the New Type of Quantum Dots
- Year: 2000
- Volume: 1
- Issue: 1
- 7
- 2080
- Pages: 15-19
Zn diffusion from vapor phase into InGaAs/InP heterostructure using diethylzinc as a p-dopant source
- Year: 2023
- Volume: 51
- Issue: 3
- 28
- 1520
- Pages: 38-45
Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication
- Year: 2023
- Volume: 51
- Issue: 4
- 31
- 1391
- Pages: 66-75
Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor
- Year: 2023
- Volume: 51
- Issue: 5
- 51
- 1672
- Pages: 142-151