MPM
    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
    Since 2000
    ISSN 1605-8119
    enАнглийский
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    AuthorZarichny
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    Zarichny
    Zarichny
    Affiliation
    Ioffe Institute
    Saint Petersburg, Russia

    The analysis of the etch pits parameters in the (-201) plane of the β-Ga2O3 substrate crystals

    Zarichny A.A.P.N. ButenkoM.E. BoikoM.D. SharkovV.I. Nikolaev
    • Year: 2023
    • Volume: 51
    • Issue: 3
    • 40
    • 2180
    • Pages: 46-51