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Lipsanen
Affiliation
Aalto University
Aalto, Finland
Critical thickness and bow of pseudomorphic InxGa1-xAs-based laser heterostructures grown on (001)GaAs and (001)InP substrates
- Year: 2015
- Volume: 24
- Issue: 3
- 9
- 2030
- Pages: 278-283
Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures
- Year: 2016
- Volume: 29
- Issue: 1
- 3
- 1950
- Pages: 71-75
On cracking in thick GaN layers grown on sapphire substrates
- Year: 2020
- Volume: 44
- Issue: 1
- 27
- 2557
- Pages: 1-7