M.A. Odnoblyudov
  • Affiliation
    Peter the Great St. Petersburg Polytechnic University
  • St.Petersburg, Russia

Parametric Modeling of Light Emitting Structures Based on III-Nitrides

  • Year: 2012
  • Volume: 14
  • Issue: 1
  • 3
  • 302
  • Pages: 78-86

Optimization of light extraction from power LED chip-on-board modules emitting in ultraviolet range of spectrum

  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 2
  • 276
  • Pages: 111-120

Heat transfer simulation and retrofit LED lamp plastic heat sink material optimization

  • Year: 2013
  • Volume: 17
  • Issue: 2
  • 3
  • 265
  • Pages: 178-182

Efficiency comparison of light emitting diodes based on monochromatic chips and chips with phosphor

  • Year: 2013
  • Volume: 18
  • Issue: 2
  • 1
  • 245
  • Pages: 135-142

Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 0
  • 304
  • Pages: 30-38

Thick GaN layers on silicon substrate

  • Year: 2015
  • Volume: 22
  • Issue: 1
  • 3
  • 253
  • Pages: 53-58

Simulation operation regimes of passive mode-locked laser based on InGaAlAs/InGaAs/InP heterostructures

  • Year: 2016
  • Volume: 27
  • Issue: 1
  • 0
  • 208
  • Pages: 74-78

Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 1
  • 319
  • Pages: 24-31

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

  • Year: 2016
  • Volume: 29
  • Issue: 1
  • 0
  • 256
  • Pages: 71-75

Defects in thin epitaxial layers of (AlхGa1-х)2O3 grown on Al2O3 substrates

  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 4
  • 352
  • Pages: 178-185

Growth of thick gallium oxide on the various substrates by halide vapor phase epitaxy

  • Year: 2020
  • Volume: 44
  • Issue: 2
  • 16
  • 458
  • Pages: 164-171