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    Materials physics and mechanicsPeter the Great St. Petersburg Polytechnic University
    Since 2000
    ISSN 1605-8119
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    Latest issues
    • 2026,Volume 54Issue 2
    • 2026,Volume 54Issue 1
    • 2025,Volume 53Issue 6
    • 2025,Volume 53Issue 5
    Mynbaeva
    Mynbaeva
    Affiliation
    Ioffe Institute
    St.Petersburg, Russia

    Light-emitting p-n structures fabricated with hydride vapor-phase epitaxy on GaN/Al2O3 structured substrates

    M.G. MynbaevaA.I. PechnikovSh.Sh. SharofidinovV.E. BougrovK.D. MynbaevS.I. StepanovM.A. OdnoblyudovV.I. NikolaevRomanov A.E.
    • Year: 2015
    • Volume: 22
    • Issue: 1
    • 3
    • 2783
    • Pages: 30-38

    Thick GaN layers on silicon substrate

    Sh.Sh. SharofidinovA.A. GolovatenkoI.P. NikitinaN.V. SeredovaM.G. MynbaevaV.E. BougrovM.A. OdnoblyudovS.I. StepanovV.I. Nikolaev
    • Year: 2015
    • Volume: 22
    • Issue: 1
    • 7
    • 2560
    • Pages: 53-58

    Optical properties of thick GaN layers grown with hydride vapor-phase epitaxy on structured substrates

    M.G. MynbaevaA.I. PechnikovA.N. SmirnovD.A. KirilenkoS.Ch. RaufovA.A. SitnikovaM.A. OdnoblyudovV.E. BougrovK.D. MynbaevV.I. NikolaevRomanov A.E.
    • Year: 2016
    • Volume: 29
    • Issue: 1
    • 13
    • 2876
    • Pages: 24-31

    On cracking in thick GaN layers grown on sapphire substrates

    M.G. MynbaevaA.A. SitnikovaA.N. SmirnovK.D. MynbaevH. LipsanenA.V. KremlevaBauman D.A.V.E. BougrovRomanov A.E.
    • Year: 2020
    • Volume: 44
    • Issue: 1
    • 28
    • 3260
    • Pages: 1-7
    Materials physics and mechanics
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