MPM
Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
Since 2000
ISSN 1605-8119
en Английский
Version for the visually impaired
Submit Your Paper

Articles by keywords "Semiconductors"

Ab initio calculations of electronic band structure of ideal and defective CdMnS

Mehrabova M.A. Panahov N.T. Hasanov N.H.
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 22
  • 1647
  • Pages: 419-427

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces

G.V. Benemanskaya P.A. Dementev S.A. Kukushkin M.N. Lapushkin A.V. Osipov S.N. Timoshnev
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 7
  • 2658
  • Pages: 108-116

Material characterization of a β-Ga2O3 crystal

Mikhail A. Bryushinin Igor A. Sokolov Roman V. Pisarev Anatoly M. Balbashov
  • Year: 2016
  • Volume: 27
  • Issue: 1
  • 7
  • 1877
  • Pages: 68-73

Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

M.A. Rozhkov E.S. Kolodeznyi A.M. Smirnov V.E. Bougrov Romanov A.E.
  • Year: 2015
  • Volume: 24
  • Issue: 2
  • 32
  • 2482
  • Pages: 194-200

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

V.N. Bessolov E.V. Konenkova A.V. Zubkova A.V. Osipov Orlova T.S. S.N. Rodin S.A. Kukushkin
  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 9
  • 2154
  • Pages: 266-274

Quantum Computing in Semiconductor Structures with 0.1 µm Separation of Nuclear-spin Qubits

D. Mozyrsky V. Privman
  • Year: 2001
  • Volume: 4
  • Issue: 1
  • 2
  • 1968
  • Pages: 5-7

Heteroepitaxial Growth of InAs on Si: the New Type of Quantum Dots

G.E. Cirlin N.K. Polyakov V.N. Petrov
  • Year: 2000
  • Volume: 1
  • Issue: 1
  • 6
  • 1956
  • Pages: 15-19