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Materials physics and mechanics Peter the Great St. Petersburg Polytechnic University
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Articles by keywords "Semiconductors"

Ab initio calculations of electronic band structure of ideal and defective CdMnS

Mehrabova M.A. Panahov N.T. Hasanov N.H.
  • Year: 2022
  • Volume: 48
  • Issue: 3
  • 19
  • 802
  • Pages: 419-427

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) surfaces

G.V. Benemanskaya P.A. Dementev S.A. Kukushkin M.N. Lapushkin A.V. Osipov S.N. Timoshnev
  • Year: 2017
  • Volume: 32
  • Issue: 2
  • 6
  • 1583
  • Pages: 108-116

Material characterization of a β-Ga2O3 crystal

Mikhail A. Bryushinin Igor A. Sokolov Roman V. Pisarev Anatoly M. Balbashov
  • Year: 2016
  • Volume: 27
  • Issue: 1
  • 4
  • 1069
  • Pages: 68-73

Comparison of characteristics of Schottky diodes based on β-Ga2O3 and other wide bandgap semiconductors

M.A. Rozhkov E.S. Kolodeznyi A.M. Smirnov V.E. Bougrov A.E. Romanov
  • Year: 2015
  • Volume: 24
  • Issue: 2
  • 27
  • 1468
  • Pages: 194-200

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthesized on SiC/Si(111) and SiC/Si(100) heterostructures

V.N. Bessolov E.V. Konenkova A.V. Zubkova A.V. Osipov Orlova T.S. S.N. Rodin S.A. Kukushkin
  • Year: 2014
  • Volume: 21
  • Issue: 3
  • 8
  • 1234
  • Pages: 266-274

Quantum Computing in Semiconductor Structures with 0.1 µm Separation of Nuclear-spin Qubits

D. Mozyrsky V. Privman
  • Year: 2001
  • Volume: 4
  • Issue: 1
  • 1
  • 1110
  • Pages: 5-7

Heteroepitaxial Growth of InAs on Si: the New Type of Quantum Dots

G.E. Cirlin N.K. Polyakov V.N. Petrov
  • Year: 2000
  • Volume: 1
  • Issue: 1
  • 3
  • 1077
  • Pages: 15-19