Articles by keywords "silicon carbide; epitaxial films SiC on Si; epitaxy; gallium nitride films; aluminum nitride films; thin films growth; porous silicon substrate"

Growth of SiC films by the method of substitution of atoms on porous Si (100) and (111) substrates

  • Year: 2018
  • Volume: 36
  • Issue: 1
  • 29
  • 1264
  • Pages: 39-52